Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2857
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2857J)
JANTX level (2N2857JX)
JANTXV level (2N2857JV)
JANS level (2N2857JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Ultra-High frequency transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0011
Reference document:
MIL-PRF-19500/343
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
15
Volts
Collector-Base Voltage
V
CBO
30
Volts
Emitter-Base Voltage
V
EBO
3
Volts
Collector Current, Continuous
I
C
40
mA
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
200
1.14
mW
mW/
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
300
1.71
mW
mW/
C
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2857
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 3 mA
15
Volts
Collector-Base Cutoff Current
I
CBO1
V
CB
= 15 Volts
10
nA
Collector-Base Cutoff Current
I
CBO3
V
CB
= 30 Volts
1
A
Collector-Base Cutoff Current
I
CBO2
V
CB
= 15 Volts, T
A
= 150
C
1
A
Collector-Emitter Cutoff Current
I
CES
V
CE
= 16 Volts
100
nA
Emitter-Base Cutoff Current
I
EBO1
V
EB
= 3 Volts
10
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
I
C
= 3 mA, V
CE
= 1 Volts
I
C
= 3 mA, V
CE
= 1 Volts
T
A
= -55
C
30
10
150
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 10 mA, I
B
= 1 mA
1.0
Volts
Collector-Emitter Saturation Voltage
V
CEsat
I
C
= 10 mA, I
B
= 1 mA
0.4
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 6 Volts, I
C
= 5 mA,
f = 100 MHz
10 21
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 6 Volts, I
C
= 2 mA,
f = 1 kHz
50 220
Collector to Base Feedback
Capacitance
C
CB
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
1
pF
Collector Base time constant
r
b
'C
C
V
CB
= 6 Volts, I
E
= 2 mA,
f = 31.9 MHz
4 15
ps
Small Signal Power Gain
G
pe
V
CE
= 6 Volts, I
E
= 1.5 mA,
f = 450 MHz
12.5 21
MHz
Noise Figure
F
V
CE
= 6 Volts, I
C
= 1.5 mA,
f < 450 MHz, R
g
= 50
4.5
dB
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