Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3019S
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3019SJ)
JANTX level (2N3019SJX)
JANTXV level (2N3019SJV)
JANS level (2N3019SJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
Volts
Collector-Base Voltage
V
CBO
140
Volts
Emitter-Base Voltage
V
EBO
7
Volts
Collector Current, Continuous
I
C
1
A
Power Dissipation, T
A
= 25
O
C
Derate linearly above 60
O
C
P
T
0.8
5.7
W
mW/
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
5.0
28.6
W
mW/
C
Thermal Resistance
R
JA
175
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3019S
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 30 mA
80
Volts
Collector-Base Cutoff Current
I
CBO1
V
CB
= 140 Volts
10
A
Collector-Emitter Cutoff Current
I
CES1
V
CE
= 90 Volts
10
nA
Collector-Emitter Cutoff Current
I
CES2
V
CE
= 90 Volts, T
A
= 150
C
10
A
Emitter-Base Cutoff Current
I
EBO1
V
EB
= 7 Volts
10
A
Emitter-Base Cutoff Current
I
EBO2
V
EB
= 5 Volts
10
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 1 A, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
T
A
= -55
C
100
50
90
50
15
40
300
200
200
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 150 mA, I
B
= 15 mA
1.1
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.2
0.5
Volts
Small Signal Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
5 20
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 5 Volts, I
C
= 1 mA,
f = 1 kHz
80 400
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
12
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
60
pF
Collector Base time constant
r
b
'C
C
V
CB
= 10 Volts, I
E
= 10 mA,
f = 79.8 MHz
400
ps
Noise Figure
NF
V
CE
= 10 Volts, I
C
= 100
A,
f = 200 Hz, R
g
= 1 k
4
dB
Switching Characteristics
Saturated Turn-On Time
t
ON
+t
OFF
30
ns
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