Copyright
2002
Semicoa Semiconductors, Inc.
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N3227
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3227J)
JANTX level (2N3227JX)
JANTXV level (2N3227JV)
JANS level (2N3227JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 0005
Reference document:
MIL-PRF-19500/317
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
20
Volts
Collector-Base Voltage
V
CBO
40
Volts
Emitter-Base Voltage
V
EBO
6
Volts
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
0.36
2.06
mW
mW/
C
Thermal Resistance
R
JA
325
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3227
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
20
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 40 Volts
V
CB
= 32 Volts
V
CB
= 20 Volts, T
A
= 150
C
10
0.2
30
A
Collector-Emitter Cutoff Current
I
CEX
V
CE
= 10Volts, V
EB
= 0.25Volts
T
A
= 125
C
30
A
Collector-Emitter Cutoff Current
I
CES
V
CE
= 20 Volts
400
nA
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 6 Volts
V
EB
= 4 Volts
10
0.25
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 10 mA, V
CE
= 0.35 Volts
I
C
= 30 mA, V
CE
= 0.4 Volts
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 100 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
T
A
= -55
C
70
40
75
30
20
250
250
300
150
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
V
BEsat5
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125
C
I
C
= 10mA, I
B
= 1mA,
T
A
= -55
C
0.70
0.80
0.50
0.85
0.90
1.20
1.02
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125
C
0.20
0.25
0.45
0.30
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 10 mA,
f = 100 MHz
5 10
Open Circuit Output Capacitance
C
OBO
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
4
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
4
pF
Storage Time
t
s
I
C
= 10 mA, I
B1
=I
B2
= 10 mA
18
ns
Saturated Turn-On Time
t
ON
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
12
ns
Saturated Turn-Off Time
t
OFF
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
25
ns
PDF 
ZIP