Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3499L
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3499LJ)
JANTX level (2N3499LJX)
JANTXV level (2N3499LJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 5620
Reference document:
MIL-PRF-19500/366
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
100
Volts
Collector-Base Voltage
V
CBO
100
Volts
Emitter-Base Voltage
V
EBO
6
Volts
Collector Current, Continuous
I
C
500
mA
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
1
5.71
W
mW/
C
Thermal Resistance
R
JA
175
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3499L
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
100
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 100 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150
C
10
50
50
A
nA
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 80 Volts
1
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 6 Volts
V
EB
= 4 Volts
10
25
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE6
h
FE7
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
T
A
= -55
C
35
50
75
100
20
45
300
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat3
I
C
= 10 mA, I
B
= 1 mA
I
C
= 300 mA, I
B
= 30 mA
0.8
1.4
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat3
I
C
= 10 mA, I
B
= 1 mA
I
C
= 300 mA, I
B
= 30 mA
0.2
0.6
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
1.5 8
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 10 Volts, I
C
= 10 mA,
f = 1 kHz
75 375
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
10
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
80
pF
Noise Figure
NF
1
NF
2
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 1 kHz, R
g
= 1 k
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 10 kHz, R
g
= 1 k
16
6
dB
Switching Characteristics
Saturated Turn-On Time
t
ON
V
EB
= 5 Volts, I
C
= 150 mA,
I
B1
= 15 mA
1,150
ns
Saturated Turn-Off Time
t
OFF
I
C
= 150 mA, I
B1
=I
B2
=15 mA
115
ns
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