Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3507A
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3507AJ)
JANTX level (2N3507AJX)
JANTXV level (2N3507AJV)
JANS level (2N3507AJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
50
Volts
Collector-Base Voltage
V
CBO
80
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
3
A
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
1
5.71
W
mW/
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
5
28.6
W
mW/
C
Thermal Resistance
R
JA
175
C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3507A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
A
80
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
50
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A
5
Volts
Collector-Emitter Cutoff Current
I
CEX1
V
CE
= 60 Volts, V
EB
= 4 Volts
1
A
Collector-Emitter Cutoff Current
I
CEX2
V
CE
= 60 Volts, V
EB
= 4 Volts,
T
A
= 150
C
1.5
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 2 Volts
T
A
= -55
C
35
30
25
20
17
175
150
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.5
1.0
1.5
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.8
1.0
1.3
2.0
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
3 15
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time
t
d
I
C
= 1.5 A, I
B1
= 150 mA
15
ns
Rise Time
t
r
I
C
= 1.5 A, I
B1
= 150 mA
30
ns
Switching Characteristics
Storage Time
t
s
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
55
ns
Fall Time
t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
35
ns
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