Type 2N3762
Geometry 6706
Polarity PNP
Qual Level: JAN - JANTXV
Data Sheet No. 2N3762
Generic Part Number:
2N3762
REF: MIL-PRF-19500/396
Features:
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in a
TO-39
case.
Also available in chip form using
the 6706
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/396
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V
CEO
40 V
Collector-Base Voltage V
CBO
40 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current, Continuous I
C
1.5 mA
Operating Junction Temperature T
J
-55 to +200
o
C
Storage Temperature T
STG
-55 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-39
Data Sheet No. 2N3762
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V, T
A
= 150
o
C
Collector-Base Cutoff Current
V
CB
= 20 V
Emitter-Base Cutoff Current
V
EB
= 2.0 V
I
EBO
---
200
nA
I
CBO1
---
100
nA
I
CEX2
---
150
A
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
40
---
I
CEX1
---
100
V
(BR)CEO
40
---
V
(BR)EBO
5.0
---
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
h
FE1
35
---
---
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
h
FE2
40
---
---
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
h
FE3
40
140
---
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
h
FE4
30
120
---
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
h
FE5
30
---
---
I
C
= 5 mA, V
CE
= 1.0 V (pulsed), T
A
= -55
o
C
h
FE6
20
---
---
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA (pulse test)
V
CE(sat)1
---
0.1
V dc
I
C
= 150 mA, I
C
= 15 mA (pulse test)
V
CE(sat)2
---
0.22
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)3
---
0.50
V dc
I
C
= 1.0 A, I
C
= 100 mA (pulse test)
V
CE(sat)4
---
0.90
V dc
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA
V
BE(sat)1
---
0.8
V dc
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)2
---
1.0
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)3
---
1.2
V dc
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
V
BE(sat)4
---
1.4
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
C
IBO
---
80
pF
pF
C
OBO
---
25
---
|h
FE
|
1.8
6.0
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Pulse Delay Time
t
d
---
8
ns
Pulse Rise Time
t
r
---
35
ns
Pulse Storage Time
t
s
---
80
ns
Pulse Fall Time
t
f
---
35
ns
Symbol
Min
Max
Unit
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