Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N3811L
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3811LJ)
JANTX level (2N3811LJX)
JANTXV level (2N3811LJV)
JANS level (2N3811LJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Matched Dual transistors
PNP silicon transistor
Features
Hermetically sealed TO-77 metal can
Also available in chip configuration
Chip geometry 0220
Reference document:
MIL-PRF-19500/336
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
Volts
Collector-Base Voltage
V
CBO
60
Volts
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
I
C
50
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
300 one section
600 both sections
1.71 one section
3.43 both sections
mW
mW/
C
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3811L
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100
A
60
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 60 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150
C
10
10
10
A
nA
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 5 Volts
V
EB
= 4 Volts
10
10
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE3-1
/h
FE3-2
I
C
= 1
A, V
CE
= 5 Volts
I
C
= 10
A, V
CE
= 5 Volts
I
C
= 100
A, V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 100
A, V
CE
= 5 Volts
T
A
= -55
C
I
C
= 100
A, V
CE
= 5 Volts
75
225
300
300
250
100
0.9
900
900
1.0
Base-Emitter Voltage
V
BE
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
|V
BE1
-V
BE2
|
3
V
CE
= 5 Volts, I
C
= 100
A
V
CE
= 5 Volts, I
C
= 10
A
V
CE
= 5 Volts, I
C
= 100
A
V
CE
= 5 Volts, I
C
= 10 mA
0.7
5
3
5
Volts
mVolts
mVolts
mVolts
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 100
A, I
B
= 10
A
I
C
= 1 mA, I
B
= 100
A
0.7
0.8
Volts
Collector-Emitter Saturation
Voltage
V
CEsat1
V
CEsat2
I
C
= 100
A, I
B
= 10
A
I
C
= 1 mA, I
B
= 100
A
0.20
0.25
Volts
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 3 of 3
www.SEMICOA.com
2N3811L
Silicon PNP Transistor
Data Sheet
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE1
|
|h
FE2
|
V
CE
= 5 Volts, I
C
= 500
A,
f = 30 MHz
V
CE
= 5 Volts, I
C
= 1 mA,
f = 100 MHz
1
1
5
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
300 900
Open Circuit Output Capacitance
C
OBO
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
5
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
8
pF
Noise Figure
NF
1
NF
2
NF
3
V
CE
= 10 Volts, I
C
= 100
A,
R
g
= 3 k
f = 100 Hz
f = 1 kHz
f = 10 kHz
4
1.5
2
dB
Noise Figure (wideband)
NF
V
CE
= 10 Volts, I
C
= 100
A,
R
g
= 3 k
10 Hz < f < 15.7 kHz
2.5
dB
Short Circuit Input Impedance
h
ie
V
CB
=10V, I
C
=1mA, f =1kHz
3 40
k
Open Circuit Output Admittance
h
oe
V
CB
=10V, I
C
=1mA, f =1kHz
5 60
Open Circuit reverse Voltage Transfer
Ratio
h
re
V
CB
=10V, I
C
=100
A, f=1kHz
25x10
-4
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