Type 2N4029
Geometry 6700
Polarity PNP
Qual Level: JAN - JANTXV
Data Sheet No. 2N4029
Generic Part Number:
2N4029
REF: MIL-PRF-19500/512
Features:
General-purpose transistor for
high speed switching and driver
applicatons.
Housed in a
TO-18
case.
Also available in chip form using
the 6700 chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/512
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V
CEO
80 V
Collector-Base Voltage V
CBO
80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current, Continuous I
C
1.0 mA
Power Dissipation at 25
o
C ambient 0.5 Watt
Derate above 25
o
C 2.86 mW/
o
C
Operating Junction Temperature T
J
-55 to +200
o
C
Storage Temperature T
STG
-55 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-18
Data Sheet No. 2N4029
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A, pulsed
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, pulsed
Emitter-Base Breakdown Voltage
I
C
= 10 A, pulsed
Collector-Base Cutoff Current
V
CB
= 60 V
I
CBO1
---
10
nA
V
CB
= 60 V, T
A
= +150
o
C
I
CBO2
---
25
A
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 2.0 V
Base-Emitter Cutoff Current
V
BE
= 3 V
I
EBO
---
25
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
80
---
I
CEX1
---
25
V
(BR)CEO
80
---
V
(BR)EBO
5.0
---
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
I
C
= 100 A, V
CE
= 5 V
h
FE1
50
---
---
I
C
= 100 mA, V
CE
= 5.0 V (pulse test)
h
FE2
100
300
---
I
C
= 500 mA, V
CE
= 5 V (pulse test)
h
FE3
70
---
---
I
C
= 1.0 A, V
CE
= 5 V (pulse test)
h
FE4
25
---
---
I
C
= 500 mA, V
CE
= 5.0 V (pulse test), T
A
= -55
o
C
h
FE5
30
---
---
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
CE(sat)1
---
0.15
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)2
---
0.5
V dc
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
V
CE(sat)3
---
1.0
V dc
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)1
---
0.9
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)2
---
1.2
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 50 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
C
IBO
---
80
pF
pF
C
OBO
---
20
---
|h
fe
|
1.5
6.0
Switching Characteristics
Symbol
Min
Max
Unit
Delay Time
I
C
= 500 mA, I
B1
= 50 mA
Rise Time
I
C
= 500 mA, I
B1
= 50 mA
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
t
f
---
35
ns
t
s
---
175
ns
t
r
---
25
ns
ns
t
d
---
15
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