Copyright
2002
Semicoa Semiconductors, Inc.
Rev. C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5004
Silicon NPN Transistor
Data Sheet
Description
Complement to the 2N5005
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5004J)
JANTX level (2N5004JX), or
JANTXV level (2N5004JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power-switching
Power Transistor
NPN silicon transistor
Features
Hermetically sealed TO-59 metal can
Also available in chip configuration
Chip geometry 9202
Reference document:
MIL-PRF-19500/534
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
Volts
Collector-Base Voltage
V
CBO
100
Volts
Emitter-Base Voltage
V
EBO
5.5
Volts
Collector Current, Continuous
I
C
5
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
2
11.4
W
mW/
C
Power Dissipation, T
C
= 25
C
Derate linearly above 25
C
P
T
58
331
W
mW/
C
Thermal Resistance
R
JA
R
JC
88
3
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5004
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100 mA
80
Volts
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 40 Volts
50
A
Collector-Emitter Cutoff Current
I
CEX
V
CE
= 60 Volts, V
EB
= 2 Volts,
T
A
= 150
C
500
A
Collector-Emitter Cutoff Current
I
CES1
I
CES2
V
CE
= 60 Volts
V
CE
= 100 Volts
1
1
A
mA
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 4 Volts
V
EB
= 5.5 Volts
1
1
mA
Thermal Impedance
JC
10
C/W
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
T
A
= -55
C
50
70
40
25
200
Base-Emitter Voltage
V
BE
V
CE
= 5 Volts, I
C
= 2.5 A
1.45
Volts
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
1.45
2.20
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
0.75
1.50
Volts
Small Signal Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 500 mA,
f = 10 MHz
7
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 5 Volts, I
C
= 100 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
250
pF
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
t
ON
t
r
t
f
t
OFF
I
C
= 5 A, I
B1
=I
B2
= 500 mA,
V
BE
= 3.7 Volts, RL = 6
0.5
1.4
0.5
1.5
s
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