Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5038
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5038J)
JANTX level (2N5038JX)
JANTXV level (2N5038JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power-switching
High power
NPN silicon transistor
Features
Hermetically sealed TO-3 metal can
Also available in chip configuration
Chip geometry 9351
Reference document:
MIL-PRF-19500/439
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
90
Volts
Collector-Base Voltage
V
CBO
150
Volts
Emitter-Base Voltage
V
EBO
7
Volts
Collector Current, Continuous
I
C
20
A
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
140
800
W
mW/
C
Thermal Resistance
R
JA
1.25
C/W
Operating Junction Temperature
T
J
-65 to +200
C
Storage Temperature
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5038
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 200 mA
90
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 25 mA
7
Volts
Collector-Base Cutoff Current
I
CBO1
V
CB
= 150 Volts
1
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= 70 Volts
1
A
Collector-Emitter Cutoff Current
I
CEX1
I
CEX2
V
CE
=100Volts, V
EB
=1.5Volts
V
CE
=100Volts, V
EB
=1.5Volts,
T
A
= 150
C
5
100
A
Emitter-Base Cutoff Current
I
EBO
V
EB
= 5 Volts
1
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 0.5 A, V
CE
= 5 Volts
I
C
= 2 A, V
CE
= 5 Volts
I
C
= 12 A, V
CE
= 5 Volts
I
C
= 12 A, V
CE
= 5 Volts
T
A
= -55
C
50
50
15
10
200
Base-Emitter Voltage
V
BE
V
CE
= 5 Volts, I
C
= 12 A
1.8
Volts
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 20 A, I
B
= 5 A
3.3
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
I
C
= 12 A, I
B
= 1.2 A
I
C
= 20 A, I
B
= 5 A
1.0
2.5
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 2 A,
f = 5 MHz
12 48
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
500
pF
Switching Characteristics
Saturated Turn-On Time
t
ON
I
C
= 12 A, I
B1
= 1.2 A
0.5
s
Saturated Turn-Off Time
t
OFF
I
C
= 12 A, I
B1
= -I
B2
= 1.2 A
2.0
s
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