Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
I
D
Continuous Drain Current(@T
A
= 25
C)
200
mA
I
DM
Drain Current Pulsed
(Note 1)
500
mA
V
GS
Gate to Source Voltage
20
V
P
D
Total Power Dissipation Single Operation (T
A
=25
C
)
0.4
W
Total Power Dissipation Single Operation (T
A
=70
C
)
3.2
mW
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
312.5
C/W
2N7000
January, 2003. Rev. 0.
1/6
Features
R
DS(on)
(Max 5 )@V
GS
=10V
R
DS(on)
(Max 5.3 )@V
GS
=4.5V
Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150C)
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
SemiWell
Semiconductor
Logic N-Channel MOSFET
Symbol
TO-92
1
3
2
3. Drain
1. Source
2. Gate
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Electrical Characteristics
( T
J
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
60
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
48
-
mV/C
I
DSS
Drain-Source Leakage Current
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125 C
-
-
1
1000
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
100
nA
Gate-Source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
1.0
-
2.5
V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS
= 10 V, I
D
= 500mA
V
GS
= 4.5 V, I
D
= 75mA
-
-
1.55
1.9
5
5.3
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
20
25
pF
C
oss
Output Capacitance
-
11
14
C
rss
Reverse Transfer Capacitance
-
3
4
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V, I
D
=200mA, R
G
=50
V
GS
= 10 V
(Note 2,3)
-
4
18
ns
t
r
Rise Time
-
2.5
15
t
d(off)
Turn-off Delay Time
-
17
44
t
f
Fall Time
-
7
24
Q
g
Total Gate Charge
V
DS
=30V, V
GS
=4.5V, I
D
=200mA
(Note 2,3)
-
0.5
0.65
nC
Q
gs
Gate-Source Charge
-
0.15
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
0.2
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Maximum Continuous Diode Forward Current
-
-
200
mA
V
SD
Diode Forward Voltage
I
S
=200mA, V
GS
=0V
(Note 2)
-
-
1.2
V
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width 300us, Duty Cycle 2%
3. Essentially independent of operating temperature.
2/6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Re
vers
e Dr
ain Cu
rr
ent
[
A
]
V
SD
, Source-Drain voltage [V]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
1.5
2.0
2.5
3.0
V
GS
= 4.5V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N
)
,
Dr
ain-
S
o
ur
ce O
n
-
R
esist
a
nce
[
m
]
I
D
, Drain Current [A]
0
2
4
6
8
10
10
-1
10
0
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 10V
2. 250 s Pulse Test
I
D
,
D
r
a
i
n
C
u
r
r
en
t [A]
V
GS
, Gate-Source Voltage [V]
10
0
10
1
10
0
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
Dr
ain
Cu
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
Note : I
D
= 200 mA
V
GS
,
Gat
e
-
S
o
u
r
c
e Volt
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
0
5
10
15
20
25
30
0
10
20
30
40
50
C
rss
C
oss
C
iss
Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
a
pa
ci
ta
nce
[p
F]
V
DS
, Drain-Source Voltage [V]
3/6
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics
Fig 6. Gate Charge Characteristics
2N7000
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 500 mA
R
DS
(
O
N)
,
(
N
or
ma
lized)
D
r
ai
n
-
S
o
urce O
n
-
R
e
s
i
s
t
a
nce
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
,
(
N
or
m
a
liz
ed)
Dr
ain-
Sour
ce
B
r
e
a
k
d
ow
n Volt
a
g
e
T
J
, Junction Temperature [
o
C]
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
2N7000
4/6
5/6
Fig 10. Switching Time Test Circuit & Waveforms
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
4.5V
Q
g
Q
gs
Q
gd
Charge
V
GS
V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
4.5V
Q
g
Q
gs
Q
gd
Charge
V
GS
V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
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