Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
I
D
Continuous Drain Current(@T
C
= 25
C)
50
A
Continuous Drain Current(@T
C
= 100
C)
35.2
A
I
DM
Drain Current Pulsed
(Note 1)
200
A
V
GS
Gate to Source Voltage
20
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
470
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
13
mJ
I
AR
Avalnche Current
(Note 1)
50
A
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
130
W
Derating Factor above 25 C
0.87
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
1.15
C/W
R
CS
Thermal Resistance, Case to Sink
-
0.5
-
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
C/W
SFP50N06
December, 2002. Rev. 1.
1/7
Features
Low R
DS
(on) (0.023 )@V
GS
=10V
Low Gate Charge (Typical 39nC)
Low Crss (Typical 110pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175C)
General Description
This Power MOSFET is produced using SemiWell's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
SemiWell
Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
TO-220
1 2
3
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
60
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
0.06
-
V/C
I
DSS
Drain-Source Leakage Current
V
DS
= 60V, V
GS
= 0V
-
-
1
uA
V
DS
= 48V, T
C
= 150 C
-
-
10
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
=10 V, I
D
= 25A
-
0.018
0.023
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
880
1140
pF
C
oss
Output Capacitance
-
430
560
C
rss
Reverse Transfer Capacitance
-
110
140
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V, I
D
=25A, R
G
=50
see fig. 13.
(Note 4, 5)
-
60
130
ns
t
r
Rise Time
-
185
380
t
d(off)
Turn-off Delay Time
-
75
160
t
f
Fall Time
-
60
130
Q
g
Total Gate Charge
V
DS
=48V, V
GS
=10V, I
D
=50A
see fig. 12.
(Note 4, 5)
-
39
45
nC
Q
gs
Gate-Source Charge
-
9.5
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
13
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
50
A
I
SM
Pulsed Source Current
-
-
200
V
SD
Diode Forward Voltage
I
S
=50A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=50A,V
GS
=0V,dI
F
/dt=100A/us
-
54
-
ns
Q
rr
Reverse Recovery Charge
-
81
-
nC
SFP50N06
NOTES
1. Repeativity rating : pulse width limited by junction temperature, <1
2. L = 220uH, I
AS
=50A, V
DD
= 25V, R
G
= 0 , Starting T
J
= 25C
3. ISD 50A, di/dt 300A/us, V
DD
BV
DSS
, Starting T
J
= 25C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
2/7
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
Note T
J
= 25
o
C
V
GS
=20V
V
GS
=10V
R
DS
(
O
N)
,
D
r
ai
n t
o
S
our
ce on
R
e
si
st
ance[
m
]
I
D
, Drain Current[ A ]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
175
o
C
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
o
C
I
DR
,
R
e
ve
r
s
e
D
r
ai
n
Cu
r
r
e
nt
[
A
]
V
SD
, Source-Drain voltage[V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
Note : I
D
= 50A
V
GS
,
G
a
t
e
-
S
our
ce
Volt
ag
e [V]
Q
g
, Total Gate Charge [nC]
5
10
15
20
25
30
35
0
500
1000
1500
2000
2500
3000
C
rss
C
oss
C
iss
Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Capaci
t
anc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 30V
2. 250 s Pulse Test
I
D
, Drai
n Cu
rrent [
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
Dr
a
i
n C
u
r
r
en
t
[
A]
V
DS
, Drain-Source Voltage[V]
3/7
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics
Fig 6. Gate Charge Characteristics
SFP50N06
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
25
50
75
100
125
150
175
0
10
20
30
40
50
I
D'
Dr
ain
Cur
r
ent
[
A
]
T
C'
Case Temperature [
o
C]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Dra
i
n
C
u
rr
en
t
[A]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 25 A
R
DS
(O
N
)
,
(
N
or
m
a
l
i
ze
d)
Dra
i
n-S
o
urce
On-Re
s
istanc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(N
ormal
i
z
e
d)
D
r
a
i
n-S
ource B
r
eak
d
o
w
n
V
o
lt
ag
e
T
J
, Junction Temperature [
o
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
JC
(t) = 1 .1 5
/W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
JC
(t)
s in g le p u lse
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), The
rma
l
Re
spo
n
se
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 11. Transient Thermal Response Curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
SFP50N06
4/7
5/7
Fig 13. Switching Time Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
SFP50N06
Fig. 12. Gate Charge Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
E
AS
=
L
L
I
AS
2
----
2
1
E
AS
=
L
L
I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
10V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
SFP50N06
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
S
controlled by pulse period
V
DD
L
L
I
S
I
S
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
10V
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
f
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
10V
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
f
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
6/7
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.7
10.1
0.382
0.398
B
6.3
6.7
0.248
0.264
C
9.0
9.47
0.354
0.373
D
12.8
13.3
0.504
0.524
E
1.2
1.4
0.047
0.055
F
1.7
0.067
G
2.5
0.098
H
3.0
3.4
0.118
0.134
I
1.25
1.4
0.049
0.055
J
2.4
2.7
0.094
0.106
K
5.0
5.15
0.197
0.203
L
2.2
2.6
0.087
0.102
M
1.25
1.55
0.049
0.061
N
0.45
0.6
0.018
0.024
O
0.6
1.0
0.024
0.039
3.6
0.142
7/7
TO-220 Package Dimension
SFP50N06
1. Gate
2. Drain
3. Source
A
B
C
I
G
L
1
M
E
F
H
K
N
O
2
3
J
D
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