copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz, Gate open
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 90 C, Full Sine wave
1.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
9.1/10
A
I
2t
I
2t
Value for fusing
tp=10mS
0.41
A
2
s
P
GM
Peak Gate Power Dissipation
T
C
= 90 C, Pulse width
1.0
us
1.0
W
P
G(AV)
Average Gate Power Dissipation
T
C
= 90 C, t=8.3ms
0.1
W
I
GM
Peak Gate Current
tp = 20us, T
J
=125C
0.5
A
V
GM
Peak Gate Voltage
tp = 20us, T
J
=125C
6.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
STM1A60
Feb, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 1 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Surface Mount Package
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay also designed for use in MPU interface, TTL-
logic.
2.T2
3.Gate
1.T1
Symbol
SOT-223
1
3
2
1/5
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
2
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half
Wave
T
J
= 125 C
-
-
0.5
mA
V
TM
Peak On-State Voltage
I
T
= 1.5 A, Inst. Measurement
-
-
1.6
V
I
+
GT1
I
Gate Trigger Current
V
D
= 6 V, R
L
=10
-
-
5
mA
I
-
GT1
II
-
-
5
I
-
GT3
III
-
-
5
I
+
GT3
IV
-
7
12
V
+
GT1
I
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
-
-
1.8
V
V
-
GT1
II
-
-
1.8
V
-
GT3
III
-
-
1.8
V
+
GT3
IV
-
-
2.0
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
-
-
V
(dv/dt)c
Critical Rate of Rise Off-
State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -
0
.5 A/ms,
V
D
=2/3 V
DRM
2.0
-
-
V/
I
H
Holding Current
-
4.0
-
mA
R
th(j-c)
Thermal Resistance
Junction to case
-
-
25
C/W
R
th(j-a)
Thermal Resistance
Junction to Ambient
-
-
60
C/W
STM1A60
2/5
Notes :
1. Pulse Width
300us , Duty cycle
2%
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
+
GT1
V
_
GT1
V
+
GT3
V
_
GT3
V
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
0
2
4
6
8
10
12
60Hz
50Hz
S
u
rg
e
On
-S
ta
te
Cu
rren
t
[A
]
Time (cycles)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
80
90
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Al
low
able Case T
e
m
perat
ure [
o
C]
RMS On-State Current [A]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.3
0.6
0.9
1.2
1.5
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Pow
e
r
Dis
s
ipat
ion [
W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
-1
10
0
10
1
T
J
= 125
o
C
T
J
= 25
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
25
I
+
GT3
I
GM
(0
.5
A
)
25
I
+
GT1
I
_
GT1
I
_
GT3
P
G(AV)
(0.1W)
P
GM
(1W)
V
GM
(6V)
Gate V
o
l
t
a
g
e
[V
]
Gate Current [mA]
3/5
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
STM1A60
10
-2
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
R
(J-C)
R
(J-A)
T
r
ansi
e
nt T
h
ermal
Impe
da
nce
[
o
C/
W
]
Time (sec)
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(2
5
o
C)
I
+
GT3
I
+
GT1
I
_
GT1
I
_
GT3
Junction Temperature [
o
C]
4/5
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
A
V
10
6V
R
G
Test Procedure
STM1A60
PDF 
ZIP