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Электронный компонент: 1N5819-1

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221 West Industry Court
3
Deer Park, NY 11729-4681
3
Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. B
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS
All ratings are at T
A
= 25
o
C unless otherwise specified.
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage
(PIV)
-
-
45
Vdc
Average DC Output
Current (I
o
)
-
-
1.0
Amps
Peak Single Cycle Surge
Current (I
fsm
)
t
p
= 8.3 ms Single
Half Cycle Sine
Wave,
Superimposed On
Rated Load
-
-
25
Amps(pk)
Thermal Resistance (
JL
)
Junction to Lead
d = 0.375"
-
-
70
C/W
Thermal Resistance (
q
JEC
)
Junction to Endcap
-
-
40
C/W
Junction Temperature (T
J
)
-
-55
-
+125
C
Operating Temperature
(T
op)
-
-55
-
+125
C
Storage Temp. (T
stg
)
-
-55
-
+150
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
CONDITIONS
MIN
TYP
MAX
UNIT
Maximum Forward
Voltage (V
f
)
I
F
= 1.0A (300
m
sec
pulse, duty cycle <
2%)
-
-
0.49
Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
T
A
= 25
C
T
A
= 100
C
-
-
0.05
4.0
m
Amps
mAmps
Junction Capacitance (C
J
)
V
R
= 5 Vdc
0.01
f
1MHz
V
sig
= 15 mV p-p
-
-
70
pF
Notes:
- All ratings are at TA = 25
C unless otherwise specified.
- Maximum storage temperature range: -55
C to +150
C.
- Maximum operating temperature range: -55
C to +125
C (1N5819-1, 1N5819UR-1).
Derate linearly at 4.5 V/
C above TL or TEC = +100
C (1N5819-1), where TEC is at L = .375 inch.
Derate linearly at 14 mA/
C above TL or TEC = +55
C (1N5819-1), where TEC is at L = .375 inch.
1N5819-1
1N5819UR-1
JAN
JANTX
JANTXV
221 West Industry Court
3
Deer Park, NY 11729-4681
3
Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. A
AXIAL MELF
SCHOTTKY BARRIER 1N5819-1
SCHOTTKY BARRIER 1N5819UR-1
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
STYLE
B
D
G
L
STYLE
A
B
C
D
DO-41
.028/.034
0.71/0.86
.08/.107
2.03/2.72
.160/.205
4.06/5.21
1.00/1.30
25.4/33.02
DO-213AB
.189/.205
4.80/5.21
.016/.022
0.41/0.56
0.001 Min
0.03 Min
.094/.105
2.39/2.67
1N5819-1
1N5819UR-1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage Drop - V
F
(V)
10
-3
10
-2
10
-1
10
0
I
n
s
t
a
n
t
a
n
e
o
u
s

F
o
r
w
a
r
d

C
u
r
r
e
n
t

-

I
F

(
A
)
Typical Forward Characteristics
100 C
125 C
25 C
0
10
20
30
40
50
60
Reverse Voltage - V
R
(V)
10
-3
10
-2
10
-1
10
0
10
1
10
2
I
n
s
t
a
n
t
a
n
e
o
u
s

R
e
v
e
r
s
e

C
u
r
r
e
n
t

-

I
R

(
m
A
)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
0
10
20
30
40
50
60
Reverse Voltage - V
R
(V)
10
20
30
40
50
J
u
n
c
t
i
o
n

C
a
p
a
c
i
t
a
n
c
e

-

C
T

(
p
F
)
Typical Junction Capacitance
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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