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Электронный компонент: MURC1510

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SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Technical Data
Data Sheet 4861, Rev.-
MURC1510-MURC1560
Ultrafast Silicon Die
Applications:
Switching Power Supply General Purpose Free-Wheeling Diodes Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics Symbol
MURC
1510
MURC
1515
MURC
1520
MURC
1540
MURC
1560
Unit
Peak Inverse Voltage
V
RWM
100 150
200
400
600
V
Average Rectified Forward
Current(Rated V
R
)
I
F(AV)
15 @ T
C
= 150
C
15 @ T
C
=
145
C
A
Peak Rectified Forward
Current(Rated V
R
, Square Wave, 20
kHz)
I
FRM
30 @ T
C
= 150
C
30 @ T
C
=
145
C
A
Max. Peak One Cycle Non-Repetitive
Surge Current
8.3 ms, half Sine pulse
I
FSM
200
150 A
Operating JunctionTemperature and
Storage Temperature
T
J,
T
stg
-65 to +175
C

Electrical Characteristics:
Characteristics Symbol
MURC
1510
MURC
1515
MURC
1520
MURC
1540
MURC
1560
Unit
Max. Instantaneous Forward Voltage
(Note1)
(I
F
= 15 Amp, T
J
= 150
C)
(I
F
= 15 Amp, T
J
= 25
C)
V
F

0.85
1.05

1.12
1.25

1.20
1.50
V
Max. Instantaneous Reverse Current
(Note1)
(Rated DC Voltage, T
C
= 150
C)
(Rated DC Voltage, T
C
= 25
C)
I
R

500
10

500
10

1000
10
A

Max. Junction Capacitance
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
C
T
240
pF
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/
s)
(I
F
= 0.5 Amp, I
R
= 1.0 A, I
REC
=0.25A)
t
rr
35
25
60
50
nS
1. Pulse Test: Pulse Width = 300s, Duty Cycle
2%
SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Data Sheet 4861, Rev.-
Dimensions in inches (mm)




Bottom side metalization:
Ti/Ni/Ag - 30 k minimum.
Top side metalization:
Al - 25 k minimum or
Ti/Ni/Ag - 30 k minimum
Bottom side is cathode, top side is anode.










Die type
Area (mil
2
) Dimension
A
(1)
Inch (millimeter)
Dimension B
(1)
Inch (millimeter)
Dimension C
(2)
Inch (millimeter)
Si p-n die
120 x 120
0.120 (3.048)
0.094 (2.388)
0.010 (0.254)
(1)
Tolerance is 0.003" (0.076 mm)
(2)
Tolerance is 0.001" (0.025 mm)




DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users'
fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
B A
ANODE
C
Cathode
Anode
SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Data Sheet 4861, Rev.-
MURC1510, MURC1515, MURC1520
SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Data Sheet 4861, Rev.-
MURC1540
SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Data Sheet 4861, Rev.-
MURC1560
SENSITRON
SEMICONDUCTOR

221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC1510-MURC1560
Data Sheet 4861, Rev.-
MURC1510, MURC1515, MURC1520, MURC1540, MURC1560