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Электронный компонент: SD040SA60A

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221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

SENSITRON
SEMICONDUCTOR


TECHNICAL DATA
DATA SHEET 1019, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop (150
C T
J
Operation)
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
V
RWM
-
60
V
Max. Average Forward Current
I
F(AV)
50% duty cycle, rectangular
wave form
1
A
Max. Peak One Cycle Non-
Repetitive Surge Current
I
FSM
8.3 ms, half Sine wave
20
A
Non-Repetitive Avalanche
Energy
E
AS
T
J
= 25
C, I
AS
= 0.74 A,
L = 18 mH
5.0
mJ
Repetitive Avalanche Current
I
AR
I
AS
decay linearly to 0 in 1
s
limited by T
J
max V
A
=1.5V
R
0.74
A
Max. Junction Temperature
T
J
-
-65 to +150
C
Max. Storage Temperature
T
stg
-
-65 to +150
C
Electrical Characteristics
(1)
:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V
F1
@ 1A, Pulse, T
J
= 25
C
0.56
V
V
F2
@ 1A, Pulse, T
J
= 125
C
0.51
V
Max. Reverse Current
I
R1
@V
R
= 60V, Pulse,
T
J
= 25
C
100
A
I
R2
@V
R
= 60V, Pulse,
T
J
= 125
C
9.0
mA
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
53
pF
(1) in SHD package
SD040SA60A/B
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com


SENSITRON


TECHNICAL DATA
DATA SHEET 1019, REV.
A
Mechanical Dimensions: In Inches / mm












0.0
0.2
0.4
0.6
0.8
Forward Voltage Drop - V
F
(V)
10
-2
10
-1
10
0
Instantaneous Forward Current - I
F
(A)
Typical Forward Characteristics
125 C
150 C
25 C
0
10
20
30
40
50
60
Reverse Voltage - V
R
(V)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
0
10
20
30
40
50
60
Reverse Voltage - V
R
(V)
10
15
20
25
30
35
40
45
50
Junction Capacitance - C
T
(pF)
Typical Junction Capacitance

SD040SA60A/B
Bottom side metalization Ag - 30 k minimum.
Top side metalization Al - 25 k minimum
or Ag - 30 k minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 0.001 (0.27
0.026) for Al top;
Dimension H = 0.0155 0.001 (0.39
0.026) for Ag top.
H
0.034
0.003
(0.86
0.077)
0.040
0.003
(1.02
0.077)
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.