SENSITRON
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD175SE45A/B/C
Technical Data
Data Sheet 4950, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Extremely Low Forward Voltage Drop
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Extremely Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
V
RWM
-
45
V
Max. Average Forward Current
I
F(AV)
50% duty cycle, rectangular
wave form
30
A
Max. Peak One Cycle Non-
Repetitive Surge Current
I
FSM
8.3 msec, sine pulse
570
A
Non-Repetitive Avalanche
Energy
E
AS
T
J
= 25
C, I
AS
= 6.0 A,
L = 2.2 mH
40
mJ
Repetitive Avalanche Current
I
AR
I
AS
decay linearly to 0 in 1
s
limited by T
J
max V
A
=1.5V
R
6.0
A
Max. Junction Temperature
T
J
-
-55 to + 125
C
Max. Storage Temperature
T
stg
-
-55 to + 125
C
Electrical Characteristics
(1)
:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V
F1
@ 30 A, Pulse, T
J
= 25
C
0.51
V
V
F2
@ 30 A, Pulse, T
J
= 125
C
0.47
V
Max. Reverse Current
I
R1
@V
R
= 45V, Pulse,
T
J
= 25
C
3.5
mA
I
R2
@V
R
= 45V, Pulse,
T
J
= 125
C
500
mA
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
1700
pF
(1) in SHD package
SENSITRON
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD175SE45A/B/C
Technical Data
Data Sheet 4950, Rev.-
Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 k minimum.
Top side metalization Al - 25 k minimum
or Ag - 30 k minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 0.001 (0.27
0.026) for Al top;
Dimension H = 0.0155 0.001 (0.39
0.026) for Ag top.
H
0.163
0.003
(4.14
0.077)
0.175
0.003
(4.45
0.077)
0.0
0.2
0.4
0.6
0.8
Forward Voltage Drop - V
F
(V)
10
0
10
1
10
2
Instantaneous Forward Current - I
F
(A)
Typical Forward Characteristics
100 C
125 C
25 C
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
10
-2
10
-1
10
0
10
1
10
2
10
3
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
200
400
600
800
1000
1200
1400
1600
Junction Capacitance - C
T
(pF)
Typical Junction Capacitance
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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