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Электронный компонент: SHD124512

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SHD124222
SHD124222P
SHD124222N
SHD124222D
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA
DATA SHEET 4681, REV. -

HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage


Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
V
RWM
- 45
V
Max. Average Forward
Current
I
F(AV)
50% duty cycle, rectangular
wave form (Single/Doubler)
15 A
Max. Average Forward
Current
I
F(AV)
50% duty cycle, rectangular
wave form (Common
Cathode/Common Anode)
30 A
Max. Peak One Cycle Non-
Repetitive Surge Current
I
FSM
8.3 ms, half Sine wave
(per leg)
200 A
Max. Thermal Resistance
R
JC
(Single) 1.45
C/W
Max. Thermal Resistance
R
JC
(Common Cathode/Common
Anode/Doubler) (per leg)
0.72
C/W
Max. Junction Temperature
T
J
-
-65 to +175
C
Max. Storage Temperature
T
stg
-
-65 to +175
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V
F1
@ 15A, Pulse, T
J
= 25
C
(per leg)
0.73 V
V
F2
@ 15A, Pulse, T
J
= 125
C
(per leg)
0.66 V
Max. Reverse Current
I
R1
@V
R
= 45V, Pulse,
T
J
= 25
C (per leg)
0.4
A
I
R2
@V
R
= 45V, Pulse,
T
J
= 125
C (per leg)
15 mA
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p) (per leg)
800 pF
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SHD124222
SHD124222P

SHD124222N
SHD124222D
TECHNICAL DATA
DATA SHEET 4681, REV. -
Mechanical Dimensions: In Inches / mm
SINGLE COMMON CATHODE



1 2 3 1 2 3

COMMON ANODE DOUBLER



1 2 3 1 2 3



PINOUT TABLE
TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE
ANODE
DUAL RECTIFIER, COMMON CATHODE (P)
ANODE 1
COMMON CATHODE
ANODE 2
DUAL RECTIFIER, COMMON ANODE (N)
CATHODE 1
COMMON ANODE
CATHODE 2
DUAL RECTIFIER, DOUBLER (D)
ANODE CATHODE/ANODE CATHODE
Note: The V
f
curves shown are for the SD125SB45 un-packaged die only.
1
2
3
.270
.240
(6.86
6.10)
.045
.035
(1.14
0.89)
.140(3.56) BSC
.550
.530
(13.97
13.46)
.695
.685
(17.65
17.40)
.835
.815
(21.21
20.70)
.707
.697
(17.96
17.70)
1.302
1.202
(33.07
30.53)
.065
.055
(1.65
1.40)
3 Places
.200(5.08) BSC
2 Places
.165
.155
(4.19
3.94)
Dia.
TO-258
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Forward Voltage Drop - V
F
(V)
10
0
10
1
Instantaneous Forward Current - I
F
(A
)
Typical Forward Characteristics
125 C
175 C
25 C
0
1
50
Reve
0
20
30
40
rse Voltage - V
R
(V)
10
-3
10
-2
10
-1
10
0
10
1
10
2
Instantaneous Reverse Current - I
R
(mA
)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
175 C
Typical Junction Capacitance
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
200
300
400
500
600
700
800
Junction Capacitance - C
T
(pF)
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.