221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 842, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
Low Forward Voltage Drop
(200 V, 15 A)
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
V
RWM
-
200
V
Max. Average Forward
Current (whole device)
I
F(AV)
50% duty cycle @T
C
=100C,
rectangular wave form
(Single & Doubler versions)
7.5
A
Max. Average Forward
Current (whole device)
I
F(AV)
50% duty cycle @T
C
=100C,
rectangular wave form
(Common Cathode & Common
Anode versions)
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
I
FSM
8.3 ms, half Sine pulse
75
A
Non-Repetitive Avalanche
Energy (per leg)
E
AS
T
J
= 25
C, I
AS
= 0.5 A
L =60 mH
7.5
mJ
Repetitive Avalanche
Current (per leg)
I
AR
I
AS
decay linearly to 0 in 1
m
s
limited by T
J
max V
A
=1.5V
R
0.5
A
Max. Junction Temperature
T
J
-
-65 to +200
C
Max. Storage Temperature
T
stg
-
-65 to +200
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V
F1
@ 7.5 A, Pulse, T
J
= 25
C
1.01
V
(per leg)
V
F2
@ 7.5 A, Pulse, T
J
= 125
C
0.88
V
Max. Reverse Current
(per leg)
I
R1
@V
R
= 200V, Pulse,
T
J
= 25
C
0.18
mA
I
R2
@V
R
= 200V, Pulse,
T
J
= 125
C
4.0
mA
Max. Junction Capacitance
(per leg)
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
150
pF
Maximum Thermal Resis.
(per leg)
R
JC
-
2.73
C/W
Max. Reverse Recovery
Time
t
rr
I
F
= 0.5 A, I
R
= 1.0 A,
I
RM
= 0.25 A, T
J
= 25
C
25
nsec
SHD125136
SHD125136P
SHD125136N
SHD125136D
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
TECHNICAL DATA
DATA SHEET 842, REV. -
Mechanical Dimensions: In Inches / mm
SINGLE COMMON CATHODE
1 2 3 1 2 3
COMMON ANODE DOUBLER
1 2 3 3 2 1
PINOUT TABLE
TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE
ANODE
DUAL RECTIFIER, COMMON CATHODE (P)
ANODE 1
COMMON CATHODE
ANODE 2
DUAL RECTIFIER, COMMON ANODE (N)
CATHODE 1
COMMON ANODE
CATHODE 2
DUAL RECTIFIER, DOUBLER (D)
ANODE
ANODE/CATHODE
CATHODE
Note:
The V
f
curves shown are for the un-packaged die only.
0.1
0.3
0.5
0.7
0.9
1.1
Forward Voltage Drop - V
F
(V)
10
-2
10
-1
10
0
10
1
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
I
F
(
A
)
Typical Forward Characteristics
125 C
200 C
175 C
25 C
0
40
80
120
160
200
240
Reverse Voltage - V
R
(V)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
n
s
t
a
n
t
a
n
e
o
u
s
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
R
(
m
A
)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
200 C
175 C
0
40
80
120
160
200
240
Reverse Voltage - V
R
(V)
0
40
80
120
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
-
C
T
(
p
F
)
Typical Junction Capacitance
SHD125136
SHD125136P
SHD125136N
SHD125136D
TO-254
1 2 3
.260
.249
(6.60
6.32)
.050
.040
(1.27
1.02)
.150(3.81) BSC
.545
.535
(13.84
13.58)
.545
.535
(13.84
13.60)
.800
.790
(20.32
20.07)
.685
.665
(17.40
16.89)
1.235
1.195
(31.37
30.35)
.045
.035
(1.14
0.89)
3 Places
.150(3.81) BSC
2 Places
.149
.139
(3.78
3.53)
Dia.
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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