221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 387, REV. B
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER
Very Low Voltage Drop
DESCRIPTION:
A 200 VOLT, 30 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC TO-254 PACKAGE.
MAXIMUM RATINGS
ALL RATINGS ARE @ T
C
= 25
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
200
Volts
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T
C
=100
O
C)
(SINGLE & DOUBLER)
I
O
15
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T
C
=100
O
C)
(COMMON CATHODE & COMMON ANODE)
I
O
30
Amps
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) (per leg)
I
FSM
150
Amps
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) (per leg)
C
T
300
pF
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)
(per leg)
R
JC
1.7
C/W
MAXIMUM OPERATING TEMPERATURE RANGE
Top
-65 to
+ 200
C
MAXIMUM STORAGE TEMPERATURE RANGE
Tstg
-65 to
+ 175
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (I
f
= 15 Amps) (per leg)
T
J
= 25
C
T
J
= 125
C
V
f
1.01
0.85
Volts
MAXIMUM REVERSE CURRENT (I
r
@ 200V PIV) (per leg)
T
J
= 25
C
T
J
= 125
C
I
r
0.015
1.0
mA
REVERSE RECOVERY TIME (I
F
= 0.5A, I
R
= 1.0A, I
RM
= 0.25 A, T
J
= 25
C)
*Due to the nature of the 200V Schottky devices, some degradation in t
rr
performance at high temperatures should be expected, unlike conventional
lower voltage Schottkys.
*t
rr
25
ns
SHD125236
SHD125236P
SHD125236N
SHD125236D
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
DATA SHEET 387, REV. A
MECHANICAL DIMENSIONS: In Inches / mm
SINGLE COMMON CATHODE
1 2 3 1 2 3
COMMON ANODE DOUBLER
1 2 3 3 2 1
PINOUT TABLE
TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE
ANODE
DUAL RECTIFIER, COMMON CATHODE (P)
ANODE 1
COMMON CATHODE
ANODE 2
DUAL RECTIFIER, COMMON ANODE (N)
CATHODE 1
COMMON ANODE
CATHODE 2
DOUBLER (D)
ANODE
ANODE/CATHODE
CATHODE
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V
F
(V)
10
-2
10
-1
10
0
10
1
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
I
F
(
A
)
Typical Forward Characteristics
125 C
200 C
175 C
25 C
0
40
80
120
160
200
240
Reverse Voltage - V
R
(V)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
n
s
t
a
n
t
a
n
e
o
u
s
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
R
(
m
A
)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
200 C
175 C
0
40
80
120
160
200
240
Reverse Voltage - V
R
(V)
0
60
120
180
240
300
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
-
C
T
(
p
F
)
Typical Junction Capacitance
SHD125236
SHD125236P
SHD125236N
SHD125236D
1 2 3
.260
.249
(6.60
6.32)
.050
.040
(1.27
1.02)
.150(3.81) BSC
.545
.535
(13.84
13.58)
.545
.535
(13.84
13.60)
.800
.790
(20.32
20.07)
.685
.665
(17.40
16.89)
1.235
1.195
(31.37
30.35)
.045
.035
(1.14
0.89)
3 Places
.150(3.81) BSC
2 Places
.149
.139
(3.78
3.53)
Dia.
TO-254
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
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