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Электронный компонент: GP1L53V

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s
Outline Dimensions
( Unit : mm)
s
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
40
mA
Collector power dissipation
P
C
75
mW
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 100
C
*2
Soldering temperature
T
sol
260
C
s
Features
s
Applications
1. Compact type
3. High current transfer ratio
( CTR: MIN. 30% at I
F
= 1mA )
4. PWB direct mounting type
1. OA equipment such as FDDs, printers,
facsimiles, etc.
2. VCRs
3. Optoelectronic switches
*1 Pulse width<= 100
s, Duty ratio= 0.01
*2 For 5 seconds
( Both sides of
detector and emitter)
Slit width
C1.0
(2.54)
0.5
10.0
3.5
7.5
1.5
(10.3)
Internal connection
diagram
1
2
3
4
1
2
3
4
1 Anode
2 Cathode
3 Collector
4 Emitter
*
Unspecified tolerances shall be as follows
;
*
( )
:
Reference dimensions
Dimensions(d) Tolerance
d
<=
6.0
0.1
6.0
<
d
<=
18.0
0.2
Compact, High Sensing
Accuracy Type
Photointerrupter
GP1L53V
2. High sensing accuracy ( Slit width: 0.5mm )
GP1L53V
( Ta = 25C)
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
L53
5.2
13.7
0.3
5.0
+
0.2
-
0.1
10.0
MIN.
4
-
0.4
+
0.3
-
0.1
4
-
0.45
+
0.3
-
0.1
( Ta = 25C)
s
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.25
1.4
V
Peak forward voltage
V
FM
I
FM
= 0.5A
-
3
4
V
I
R
V
R
= 3V
-
-
10
A
Output
Collector dark current
I
CEO
V
CE
= 10V
-
-
10
-
6
A
Transfer
charac-
teristics
I
F
= 1mA, V
CE
= 2V
0.3
-
mA
Collector-emitter saturation voltage
V
CE( sat )
I
F
= 2mA, I
C
= 0.3mA
-
-
1.0
V
Response time
Rise time
t
r
V
CE
= 2V, I
C
= 2mA
R
L
= 100
-
80
400
s
Fall time
t
f
-
70
350
s
- 25
0
25
50
75
85
100
0
10
20
30
40
50
60
- 25
0
25
50
75
85
100
0
20
40
60
80
100
120
75
1000
2000
500
200
100
50
20
5
2
5
2
5
Duty ratio
Pulse width<=100
s
0
0.5
1
1.5
2
2.5
3
3.5
1
2
5
10
20
50
100
200
500
25C
0C
50C
F
Ambient Temperature
Fig. 1 Forward Current vs.
Collector power dissipation P
C
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
T
a
= 25C
10
- 2
10
Peak forward current I
FM
(
mA
)
Forward current I
F
(
mA
)
F
(V)
Duty Ratio
Fig. 4 Forward Current vs.
Forward Voltage
Fig. 3 Peak Forward Current vs.
Reverse current
20
Forward current I
(
mA
)
- 1
- 25C
Forward voltage V
(
mW
)
GP1L53V
Ambient Temperature T
a
( C )
Ambient temperature T
a
( C )
T
a
= 75C
1
Collector Current
Ic
1
2
3
4
5
0
0
2
4
6
8
10
12
14
16
18
20
22
24
1
2
3
4
5
0
0
2
4
6
8
10
12
14
16
18
20
22
6
10
9
8
7
Pc ( MAX. )
1.0mA
0.5mA
1.5mA
2.0mA
0
25
- 25
0
0.2
0.4
0.6
1.0
Collector-emitter saturation voltage
50
100
75
0.8
0
25
- 25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
50
100
75
2
5
1
1
10
20
50
100 200
500 1000
2
5
10
20
50
100
200
500
1000
Output
Output
Input
10%
90%
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Fig. 6 Collector Current vs.
Collector-emitter Voltage
V
CE
= 2V
V
CC
R
L
t
d
t
r
t
s
t
f
Forward current I
F
Collector-emitter voltage V
CE
Input R
D
L
t
r
t
f
t
d
t
s
T
a
= 25C
T
a
= 25C
Fig. 5 Collector Current vs.
Forward Current
Fig. 7 Collector Current vs.
Ambient Temperature
Fig. 9 Response Time vs.
I
F
= 2.5mA
I
F
= 1mA
V
CE
= 2V
I
F
= 2mA
I
C
=
0.3mA
V
CE
= 2V
I
C
= 10mA
T
a
= 25C
Collector current I
C
(
mA
)
Collector current I
C
(
mA
)
Collector current I
C
(
mA
)
V
CE
( sat
)
(
V
)
Response time
(
s
)
( mA )
( V)
(
)
Ambient temperature T
a
( C)
Test Circuit for Response Time
Ambient temperature T
a
( C)
GP1L53V
Load Resistance
Load resistance R
2
5
10
3
- 20
- 15
- 10
- 5
0
5
10
4
5
10
5
5
10
6
Fig.10 Frequency Response
2
2
2
1k
100
10
- 2.5
0
50
100
- 2 - 1.5 - 1 - 0.5
0
0.5
1
1.5
2
2.5
L
0
Detector
Shield
(Detector center)
-
+
0
50
100
- 2
- 1
0
1
2
L
0
Detector
Shield
(
Detector center
)
-
+
- 25
0
25
100
50
75
5
5
5
5
5
5
5
Fig.11 Collector Dark Current vs.
Ambient Temperature
V
CE
= 2V
I
C
= 10mA
V
CE
= 10V
Fig.12 Relative Collector Current vs.
Shield Distance (1)
I
F
= 1mA, V
CE
= 2V
Fig.13 Relative Collector Current vs.
R
L
=
T
a
= 25C
T
a
= 25C
T
a
= 25C
s
Precautions for Use
10
- 11
10
- 10
10
- 9
10
- 8
10
- 7
10
- 6
10
- 5
10
- 4
Ambient temperature T
a
( C)
I
F
= 1mA, V
CE
= 2V
Shield Distance ( 2 )
Voltage gain Av
(
dB
)
Frequency f ( Hz )
Collector dark current I
CEO
(
A
)
Relative collector current
(%
)
Shield distance L ( mm )
Relative collector current
(%
)
Shield distance L ( mm )
GP1L53V
( 1) In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, Methyl alcohol, Isopropyl alcohol
( 2) As for other general cautions, refer to the chapter"Precautions for Use" .