GP1S06
GP1S06
s
Outline Dimensions
(Unit : mm )
s
Features
s
Absolute Maximum Ratings
(Ta = 25C )
s
Applications
1. High sensing accuracy
( Slit width : 0.25mm )
1. Floppy disk drives
2. Copiers, printers, facsimiles
Input
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
75
mW
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 100
C
*2
Soldering temperature
T
sol
260
C
Parameter
Symbol
Rating
Unit
3. Optoelectronic switches, optoelectronic
counters
0.25
1S06
12.0
(8.8)
2.5
8.0
2.3
C0.5
6.0
Internal connection diagram
1
2
4
3
2
-
0.7
1
2
4
3
Dimensions(d) Tolerance
0.15
0.25
1 Anode
2 Cathode
3 Collector
4 Emitter
(Both sides of detector
and emitter )
*1 Pulse width<= 100
s, Duty ratio= 0.01
*2 For 5 seconds
High Sensing Accuracy Type
Photointerrupter
2. PWB direct mounting type package
Slit width
2
-
(2.54)
d
<=
6.0
6.0
<
d
<=
12.0
*
Unspecified tolerances shall be as follows
;
*
( )
:
Reference dimensions
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
0.25
0.05
2
-
12.0
MIN.
2
-
11.0
MIN.
3.0
+
0.2
-
0.1
3.7
+
0.1
-
0
2.0
+
0
-
0.15
4
-
0.45
+
0.3
-
0.1
5.5
0.1
5.26
0.2
2
-
0.7
0.1
3.5
0.1
GP1S06
(Ta = 25C )
s
Electro-optical Characteristics
- 25
0
25
50
75
100
0
10
20
30
40
50
60
85
- 25
0
25
50
75
100
0
20
40
60
85
80
100
120
75
0
0.5
1.0
1.5
2.0
1
2
10
20
100
200
2.5
3.0
5
50
500
25C
0C
- 25C
50C
Duty ratio
20
2
5
5
2
5
2
50
100
200
500
1 000
1 0000
2 000
Fig. 1 Forward Current vs. Ambient
Temperature
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
Collector power dissipation P
c
(
mW
)
Ambient temperature T
a
( C)
Fig. 3 Peak Forward Current vs. Duty Ratio
Fig. 4 Forward Current vs. Forward Voltage
T
a
= 25C
T
a
= 75C
Peak forward current I
FM
(
mA
)
Forward current I
F
(
mA
)
Forward voltage V
F
( V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.2
1.4
V
Peak forward voltage
V
FM
I
FM
= 0.5A
-
3
4
V
Reverse current
I
R
V
R
= 3V
-
-
10
A
Output
Collector dark current
I
CEO
V
CE
= 20V
-
Transfer
charac-
teristics
Collector Current
Ic
V
CE
= 5V, I
F
= 20mA
0.1
-
2.5
mA
Collector-emitter saturation voltage
V
CE( sat )
I
F
= 40mA, I
C
= 50
A
-
-
0.4
V
Response time
Rise time
t
r
V
CE
= 2V, I
C
= 0.5mA, R
L
= 1k
-
38
90
s
Fall time
t
f
-
48
110
s
Pulse width<=100
s
10
0
100
1
nA
10
- 3
10
- 2
10
- 1
0
20
10
30
40
0
2
0
0.2
1
3
4
5
6
7
8
9
10
- 25
0
25
50
75
100
0
0.1
0.2
- 25
0
25
50
75
100
0
0.02
0.2
0.5
1
5
10
1
10
20
50
Response time
(
s
)
2
2
5
100
200
500
10
%
Output
Input
90
%
Input
Output
50
0.4
0.6
0.8
1.0
1.2
1.4
1.6
40mA
30mA
20mA
10mA
0.3
0.4
0.5
0.6
0.7
0.8
0.04
0.06
0.08
0.10
0.12
0.14
0.16
Fig. 5 Collector Current vs. Forward Current
V
CE
= 5V
T
a
= 25C
Collector current I
c
(
mA
)
Forward current I
F
( mA )
Fig. 6 Collector Current vs.
Collector-emitter Voltage
T
a
= 25C
I
F
= 50mA
Collector current I
c
(
mA
)
Collector-emitter voltage V
CE
( V)
I
F
= 20mA
V
CE
= 5V
Collector current I
C
(
mA
)
Ambient temperature T
a
(C)
Ambient temperature T
a
( C)
V
CE
(
sat
)
(V
)
I
F
= 40mA
I
C
= 50
A
Test Circuit for Response Time
L
( k
)
R
D
V
CC
R
L
t
r
t
s
t
d
t
f
Fig. 7 Collector Current vs.
Ambient Temperature
Fig. 8 Collector-emitter Saturation
GP1S06
V
CE
= 2V
I
C
= 0.5mA
T
a
= 25C
Collector-emitter saturation voltage
Ambient Temperature
Voltage vs.
t
f
t
r
t
d
t
s
20
50
1.8
2.0
2.2
2.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 9 Response Time vs. Load Resistance
Load resistance R
5
- 20
Frequency f ( Hz )
2
5
2
5
2
- 15
- 10
- 5
1k
0
25
50
75
100
10
- 10
2
5
- 0.4
0
0.1
0.2
0
Relative collector current
(
%
)
Shield distance L ( mm )
- 0.3
0.3
0.4
50
(Detector center )
Detector
Shield
L
0
+
-
-
+
0
L
Shield
Detector
100
50
4
3
- 1
- 2
Shield distance L ( mm )
Relative collector current
(
%
)
0
2
1
0
5
2
10
- 9
10
- 8
5
2
10
- 7
2
5
10
- 6
- 0.2 - 0.1
Fig.10 Frequency Response
Fig.11 Collector Dark Current vs.
V
CE
= 2V
I
C
= 0.5mA
T
a
= 25C
R
L
= 10k
V
CE
= 20V
Collector dark current I
CEO
(
A
)
Ambient temperature T
a
(C)
Fig.12 Relative Collector Current vs.
Shield Distance ( 1 )
Fig.13 Relative Collector Current vs.
Shield Distance ( 2 )
Ambient Temperature
I
F
= 20mA
V
CE
= 5V
T
a
= 25C
I
F
= 20mA
V
CE
= 5V
T
a
= 25C
GP1S06
10
3
10
4
10
5
0
Voltage gain A
V
(
dB
)
100
Detector
center
(
)
q
Please refer to the chapter "Precautions for Use" ( Page 78 to 93 ) .
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