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Электронный компонент: GP1S55T

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GP1S55T
GP1S55T
s
Features
s
Applications
3. Optoelectronic switches, electronic
counters, edge sensors
s
Absolute Maximum Ratings
(Ta = 25C )
*1 Pulse width<=100
s, Duty ratio= 0.01
*2 For 5 seconds
s
Outline Dimemsions
(Unit : mm )
GP1S55
8.0
( 5.5
)
11.0
Internal connection
diagram
( Slit width of detector side )
Detector center
B
A
A
'
B
'
2
-
0.7
2.0
5.0
(7.4)
0.5
3
4
2
1
4
1
2
3
3 Collector
4 Emitter
1 Anode
2 Cathode
( Slit width of
emitter side )
B-B
'
section
A-A
'
section
Compact, High Sensing
Accuracy Narrow Gap
Type Photointerrupter
Parameter
Symbol
Rating
Unit
Input
Forward current
50
mA
1
A
Reverse voltage
6
V
Power dissipation
75
mW
Output
Collector-emitter voltage
35
V
Emitter-collector voltage
6
V
Collector current
20
mA
Collector power dissipation
75
mW
Operating temperature
- 25 to + 85
C
Storage temperature
- 40 to + 100
C
260
C
Dimensions(d) Tolerance
d
<=
6.0
0.1
6.0
<
d
<=
18.0
0.2
*1
Peak forward current
*2
Soldering temperature
I
F
I
FM
V
R
P
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
2. VCRs , cassette decks
1. Compact package ( Case height: 8mm )
2. High sensing accuracy
1. OA equipment such as FDDs. printers,
facsimiles
( Slit width Detector side: 0.15mm,
Emitter side: 0.5mm )
3. Easy positioning to PWB with positioning
pin
4. PWB direct mounting type
*
Unspecified tolerances
*
( )
:
Reference dimensions
shall be as follows
;
(2.54)
D
C1
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
0.15
0.07
12.0
MIN.
2
-
0.7
0.05
10.2
0.15
0
-
4.5
+
0.3
-
0.1
4
-
0.4
+
0.3
-
0.1
2.0
+
0.3
-
0
GP1S55T
(Ta = 25C )
s
Electro-optical Characteristics
Input
Output
Transfer
charac-
teristics
- 25
0
25
50
75
85
100
0
10
20
30
40
50
60
- 25
0
25
50
75
85
100
0
20
40
60
80
100
120
75
500
200
100
50
20
5
2
5
2
5
Duty ratio
Pulse width<=100
s
0
0.5
1
1.5
2
2.5
3
1
2
5
10
20
50
100
200
500
25C
0C
50C
Fig. 1 Forward Current vs.
Ambient Temperature
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
Forward voltage V
F
Ambient temperature T
a
Ambient temperature T
a
T
a
= 25C
T
a
= 75C
Fig. 3 Peak Forward Current vs.
Duty Ratio
Fig. 4 Forward Current vs.
Forward Voltage
- 25C
Conditions
MIN.
TYP.
MAX.
Unit
Forward voltage
-
1.2
1.4
V
Peak forward voltage
-
3
4
V
Reverse current
-
-
10
A
Collector dark current
-
0.6
-
-
mA
Collector-emitter saturation
voltage
-
-
0.4
V
Response time
Rise time
-
5
25
s
Fall time
-
6
30
s
Parameter
I
F
=20mA
I
FM
=0.5A
V
R
=3V
V
CE
=20V
1
F
= 20mA, V
CE
= 5V
V
CE
= 2V, I
C
= 2mA
R
L
= 100
I
F
= 40mA, I
C
= 0.6mA
Symbol
V
F
V
FM
I
R
I
CEO
V
CE ( sat )
t
r
t
r
Forward current I
F
(
mA
)
Collector power dissipation Pc
(
mW
)
Forward current I
F
(
mA
)
10
- 2
10
- 1
(V)
1
100
nA
(C)
Peak forward current I
FM
(
mA
)
10
0
(C)
2000
1000
Collector Current
Ic
10
20
30
40
50
0
0
1
2
4
5
3
0
25
- 25
0
1
2
50
100
75
0.01
0.1
0.1
1
10
0.2
0.5
1
2
5
10
20
50
100
1
2
3
4
5
0
0
1
2
3
4
5
6
6
10
9
8
7
0
25
- 25
0.15
0.20
Collector-emitter saturation voltage
50
100
75
Output
Output
Input
10%
90%
V
CE
= 5V
Fig. 6 Collector Current vs.
Collector-emitter Voltage
I
F
= 20mA
V
CE
= 5V
I
F
= 40mA
I
C
= 0.6mA
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
V
CE
= 2V
I
C
R
L
t
d
t
r
t
s
Input R
D
Forward current I
F
Collector-emitter voltage V
CE
I
F
L
t
f
t
r
t
d
t
s
T
a
= 25C
T
a
= 25C
Ambient temperature T
a
Ambient temperature T
a
T
a
= 25C
t
f
Fig. 5 Collector Current vs.
Forward Current
Fig. 7 Collector Current vs.
Ambient Temperature
Fig. 9 Response Time vs.
GP1S55T
8
Collector current Ic
(mA
)
( mA )
Collector current Ic
(mA
)
( V)
= 50mA
40mA
30mA
20mA
10mA
V
CE
(
sat
)
(
V
)
0.10
Collector current Ic
(mA
)
(C)
Response time
(
s
)
Test Circuit for Response Time
V
CC
( k
)
= 2mA
(C)
Load Resistance
Load resistance R
2
5
- 20
- 15
- 10
- 5
0
5
5
5
Fig.10 Frequency Response
2
2
2
10k
1k
100
- 25
0
25
100
50
75
2
5
2
5
2
5
2
5
0
50
100
- 0.4 - 0.3 - 0.2 - 0.1
0
0.1 0.2
0.3 0.4 0.5
L
0
Detector
Shield
(Detector center )
-
+
50
100
- 2
- 1
0
1
2
0
Detector
Shield
(
Detector center
)
-
+
L
V
CE
= 20V
Fig.11 Collector Dark Current vs.
Ambient Temperature
I
F
V
CE
= 5V
I
F
V
CE
= 5V
Fig.12 Relative Collector Current vs.
Shield Distance (1)
Fig.13 Relative Collector Current vs.
Shield Distance (2)
R
L
=
Ambient temperature T
a
T
a
= 25C
T
a
= 25C
GP1S55T
s
Precautions for Use
V
CE
= 2V
I
C
T
a
= 25C
Voltage gain Av
(
dB
)
10
3
10
4
10
5
10
6
= 2mA
10
- 6
10
- 7
10
- 8
10
- 9
10
- 10
( C)
Collector dark current I
CEO
(
A
)
Shield distance L ( mm )
- 0.5
Relative collector current
(%
)
Shield distance L ( mm )
= 20mA
Relative collector current
(%
)
( 1) In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, isopropyl alcohol
Frequency f ( Hz )
= 20mA
( 2) As for other general cautions, refer to the chapter " Precautions for Use .
"