Integrated Circuits Group
LH28F160BJHE-TTLZE
Flash Memory
16M (1M 16)
(Model No.:
LHF16JZE)
Spec No.:
EL135023
Issue Date:
May 11, 2001
P
RODUCT
S
PECIFICATIONS
LHF16JZE
Rev. 1.27
Handle this document carefully for it contains material protected by international copyright law.
Any reproduction, full or in part, of this material is prohibited without the express written
permission of the company.
When using the products covered herein, please observe the conditions written herein and the
precautions outlined in the following paragraphs. In no event shall the company be liable for any
damages resulting from failure to strictly adhere to these conditions and precautions.
(1) The products covered herein are designed and manufactured for the following application
areas. When using the products covered herein for the equipment listed in Paragraph (2),
even for the following application areas, be sure to observe the precautions given in
Paragraph (2). Never use the products for the equipment listed in Paragraph (3).
Office electronics
Instrumentation and measuring equipment
Machine tools
Audiovisual equipment
Home appliance
Communication equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following equipment which
demands high reliability, should first contact a sales representative of the company and then
accept responsibility for incorporating into the design fail-safe operation, redundancy, and
other appropriate measures for ensuring reliability and safety of the equipment and the
overall system.
Control and safety devices for airplanes, trains, automobiles, and other
transportation equipment
Mainframe computers
Traffic control systems
Gas leak detectors and automatic cutoff devices
Rescue and security equipment
Other safety devices and safety equipment, etc.
(3) Do not use the products covered herein for the following equipment which demands
extremely high performance in terms of functionality, reliability, or accuracy.
Aerospace equipment
Communications equipment for trunk lines
Control equipment for the nuclear power industry
Medical equipment related to life support, etc.
(4) Please direct all queries and comments regarding the interpretation of the above three
Paragraphs to a sales representative of the company.
Please direct all queries regarding the products covered herein to a sales representative of the
company.
sharp
LHF16JZE
1
Rev. 1.27
CONTENTS
PAGE
1 INTRODUCTION.............................................................. 3
1.1 Features ........................................................................ 3
1.2 Product Overview......................................................... 3
1.3 Product Description ...................................................... 4
1.3.1 Package Pinout ....................................................... 4
1.3.2 Block Organization................................................. 4
2 PRINCIPLES OF OPERATION........................................ 7
2.1 Data Protection ............................................................. 8
3 BUS OPERATION ............................................................ 8
3.1 Read.............................................................................. 8
3.2 Output Disable.............................................................. 8
3.3 Standby......................................................................... 8
3.4 Reset............................................................................. 8
3.5 Read Identifier Codes................................................... 9
3.6 Write............................................................................. 9
4 COMMAND DEFINITIONS............................................. 9
4.1 Read Array Command................................................ 12
4.2 Read Identifier Codes Command ............................... 12
4.3 Read Status Register Command ................................. 12
4.4 Clear Status Register Command................................. 12
4.5 Block Erase Command ............................................... 13
4.6 Full Chip Erase Command ......................................... 13
4.7 Word Write Command ............................................... 13
4.8 Block Erase Suspend Command ................................ 14
4.9 Word Write Suspend Command................................. 14
4.10 Set Block and Permanent Lock-Bit Command......... 15
4.11 Clear Block Lock-Bits Command ............................ 15
4.12 Block Locking by the WP# ...................................... 16
PAGE
5 DESIGN CONSIDERATIONS ...................................... 25
5.1 Three-Line Output Control ....................................... 25
5.2 Power Supply Decoupling ........................................ 25
5.3 V
CCW
Trace on Printed Circuit Boards .................... 25
5.4 V
CC
, V
CCW
, RP# Transitions ................................... 25
5.5 Power-Up/Down Protection...................................... 25
5.6 Power Dissipation ..................................................... 25
5.7 Data Protection Method ............................................ 26
6 ELECTRICAL SPECIFICATIONS ............................... 27
6.1 Absolute Maximum Ratings ..................................... 27
6.2 Operating Conditions ................................................ 27
6.2.1 Capacitance ......................................................... 27
6.2.2 AC Input/Output Test Conditions ....................... 28
6.2.3 DC Characteristics .............................................. 29
6.2.4 AC Characteristics - Read-Only Operations ....... 31
6.2.5 AC Characteristics - Write Operations ............... 33
6.2.6 Alternative CE#-Controlled Writes..................... 35
6.2.7 Reset Operations ................................................. 37
6.2.8 Block Erase, Full Chip Erase, Word Write and
Lock-Bit Configuration Performance ................ 38
7 PACKAGE AND PACKING SPECIFICATIONS......... 39
sharp
LHF16JZE
2
Rev. 1.27
LH28F160BJHE-TTLZE
16M-BIT ( 1Mbit 16 )
Boot Block Flash MEMORY
Low Voltage Operation
V
CC
=V
CCW
=2.7V-3.6V Single Voltage
16bit I/O Interface
High-Performance Read Access Time
90ns(V
CC
=2.7V-3.6V)
Operating Temperature
-40C to +85C
Low Power Management
Typ. 2A (V
CC
=3.0V) Standby Current
Automatic Power Savings Mode Decreases I
CCR
in
Static Mode
Typ. 120A (V
CC
=3.0V, T
A
=+25C, f=32kHz)
Read Current
Optimized Array Blocking Architecture
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Thirty-one 32K-word Main Blocks
Top Boot Location
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
Enhanced Automated Suspend Options
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
Enhanced Data Protection Features
Absolute Protection with V
CCW
V
CCWLK
Block Erase, Full Chip Erase, Word Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
Automated Block Erase, Full Chip Erase,
Word Write and Lock-Bit Configuration
Command User Interface (CUI)
Status Register (SR)
SRAM-Compatible Write Interface
Industry-Standard Packaging
48-Lead TSOP
ETOX
TM*
Nonvolatile Flash Technology
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
SHARP's LH28F160BJHE-TTLZE Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a
wide range of applications.
LH28F160BJHE-TTLZE can operate at V
CC
=2.7V-3.6V and V
CCW
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation
capability realizes long battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the LH28F160BJHE-TTLZE offers four levels of protection: absolute protection with V
CCW
V
CCWLK
, selective
hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code
security needs.
The LH28F160BJHE-TTLZE is manufactured on SHARP's 0.25m ETOX
TM*
process technology. It come in industry-
standard package: the 48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
sharp
LHF16JZE
3
Rev. 1.27
1 INTRODUCTION
This datasheet contains LH28F160BJHE-TTLZE
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4 and 5 describe the memory
organization and functionality. Section 6 covers electrical
specifications.
1.1 Features
Key enhancements of LH28F160BJHE-TTLZE boot block
Flash memory are:
Single low voltage operation
Low power consumption
Enhanced Suspend Capabilities
Boot Block Architecture
Please note following:
V
CCWLK
has been lowered to 1.0V to support 2.7V-
3.6V block erase, full chip erase, word write and lock-
bit configuration operations. The V
CCW
voltage
transitions to GND is recommended for designs that
switch V
CCW
off during read operation.
1.2 Product Overview
The LH28F160BJHE-TTLZE is a high-performance 16M-
bit Boot Block Flash memory organized as 1M-word of 16
bits. The 1M-word of data is arranged in two 4K-word
boot blocks, six 4K-word parameter blocks and thirty-one
32K-word main blocks which are individually erasable,
lockable and unlockable in-system. The memory map is
shown in Figure 3.
The dedicated V
CCW
pin gives complete data protection
when V
CCW
V
CCWLK
.
A Command User Interface (CUI) serves as the interface
between the system processor and internal operation of the
device. A valid command sequence written to the CUI
initiates device automation. An internal Write State
Machine (WSM) automatically executes the algorithms
and timings necessary for block erase, full chip erase,
word write and lock-bit configuration operations.
A block erase operation erases one of the device's 32K-
word blocks typically within 1.2s (3V V
CC
, 3V V
CCW
),
4K-word blocks typically within 0.6s (3V V
CC
, 3V V
CCW
)
independent of other blocks. Each block can be
independently erased minimum 100,000 times. Block
erase suspend mode allows system software to suspend
block erase to read or write data from any other block.
Writing memory data is performed in word increments of
the device's 32K-word blocks typically within 33s (3V
V
CC
, 3V V
CCW
), 4K-word blocks typically within 36s
(3V V
CC
, 3V V
CCW
). Word write suspend mode enables
the system to read data or execute code from any other
flash memory array location.
Individual block locking uses a combination of bits, thirty-
nine block lock-bits, a permanent lock-bit and WP# pin, to
lock and unlock blocks. Block lock-bits gate block erase,
full chip erase and word write operations, while the
permanent lock-bit gates block lock-bit modification and
locked block alternation. Lock-bit configuration
operations (Set Block Lock-Bit, Set Permanent Lock-Bit
and Clear Block Lock-Bits commands) set and cleared
lock-bits.
The status register indicates when the WSM's block erase,
full chip erase, word write or lock-bit configuration
operation is finished.
sharp
PDF 
ZIP