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Электронный компонент: 2SC4232

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : MTO-3P
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55150
Junction Temperature
Tj
150
Collector to Base Voltage
V
CBO
1200
V
Collector to Emitter Voltage
V
CEO
800
V
Emitter to Base Voltage
V
EBO
7
V
Collector Current DC
I
C
2
A
Collector Current Peak
I
CP
4
Base Current DC
I
B
1
A
Base Current Peak
I
BP
2
Total Transistor Dissipation
P
T
Tc = 25
70
W
Mounting Torque
TOR
(Recommended torque : 0.5Nm)
0.8
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
V
CEO
(sus)
I
C
= 0.1A
Min 800
V
Collector Cutoff Current
I
CBO
At rated Voltage
Max 0.1
mA
I
CEO
Max 0.1
Emitter Cutoff Current
I
EBO
At rated Voltage
Max 0.1
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
Min 8
h
FEL
V
CE
= 5V, I
C
= 1mA
Min 7
Collector to Emitter Saturation Voltage
V
CE
(sat)
I
C
= 1A
Max 1.0
V
Base to Emitter Saturation Voltage
V
BE
(sat)
I
B
= 0.2A
Max 1.5
V
Thermal Resistance
jc
Junction to case
Max 1.7
/W
Transition Frequency
f
T
V
CE
= 10V, I
C
= 0.2A
TYP 8
MHz
Turn on Time
ton
I
C
= 1A
Max 0.5
Storage Time
ts
I
B1
= 0.2A, I
B2
= 0.4A
Max 3.5
s
Fall Time
tf
R
L
= 250, V
BB2
= 4V
Max 0.3
HFX Series
Switching Power Transistor
2A NPN
2SC4232
(T2W80HFX)
1
10
100
2SC4232
0.001
0.01
0.1
1
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
V
CE
= 5V
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Tc = 150
C
100
C
50
C
25
C
0
C
-
25
C
-
55
C
h
FE
- I
C
4
Collector Current I
C
[A]
DC Current Gain h
FE
0
0.5
1
1.5
2
2.5
3
2SC4232
0.01
0.1
1
0
0.5
1
1.5
2
2.5
3
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
I
C
= 0.25A
1A
2A
4A
Tc = 25
C
Saturation Voltage
0.5A
I
C
=
0.25A
1A
2A
4A
0.5A
2
Base Current I
B
[A]
Collector-Emitter Voltage V
CE
[V]
Base-Emitter Voltage V
BE
[V]
0.01
0.1
1
10
0
0.5
1
1.5
2
2SC4232
I
B1
= 0.2I
C
I
B2
= 0.4I
C
V
BB2
= 4V
V
CC
= 250V
Tc = 25
C
t
s
t
on
t
f
Switching Time - I
C
Collector Current I
C
[A]
Switching Time t
SW
[
s]
0.01
0.1
1
10
0
50
100
150
200
250
300
2SC4232
I
C
= 1A
I
B1
= 0.2A
I
B2
= 0.4A
V
BB2
= 4V
Tc = 25
C
t
s
t
on
t
f
Switching Time - V
CC
Collector Voltage V
CC
[V]
Switching Time t
SW
[
s]
0.01
0.1
1
10
0
50
100
150
2SC4232
I
C
= 1A
I
B1
= 0.2A
I
B2
= 0.4A
V
BB2
= 4V
R
L
= 250
t
s
t
on
t
f
Switching Time - Tc
Case Temperature Tc [
C]
Switching Time t
SW
[
s]
0.01
0.1
1
10
0
0.5
1
1.5
2
2SC4232
I
B1
= 0.2I
C
I
B2
= 0.4I
C
V
BB2
= 4V
V
CE (clamp)
= 300V
Tc = 25
C
t
s
t
f
+ t
vs
t
f
L-Load Switching Time - I
C
Switching Time t
SW
[
s]
Collector Current I
C
[A]
0.01
0.1
1
10
0
0.5
1
1.5
2
2SC4232
I
B1
= 0.2I
C
I
B2
= 0.4I
C
V
BB2
= 4V
V
CE (clamp)
= 300V
Tc = 100
C
t
s
t
f
+ t
vs
t
f
L-Load Switching Time - I
C
(At High Temperature)
Switching Time t
SW
[
s]
Collector Current I
C
[A]
Transient Thermal Impedance
0.001
0.01
0.1
1
10
2SC4232
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
Forward Bias SOA
0.01
0.1
1
1
10
100
2SC4232
50
s
Tc = 25
C
Single Pulse
150
s
1ms
10ms
DC
4
800
Collector-Emitter Voltage V
CE
[V]
Collector Current I
C
[A]
P
T
limit
I
S/B
limit
0
20
40
60
80
100
0
50
100
150
2SC4232
Collector Current Derating
Collector Current Derating [%]
V
CE
= fixed
P
T
limit
I
S/B
limit
Case Temperature Tc [
C]
0
0.5
1
1.5
2
2.5
3
3.5
4
0
200
400
600
800
1000
1200
2SC4232
I
B1
= 0.25I
C
I
B2
= 0.3A
V
BB2
= 5V
Tc < 150
C
Reverse Bias SOA
Collector-Emitter Voltage V
CE
[V]
Collector Current I
C
[A]