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Электронный компонент: 2SK2670

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SHINDENGEN
2SK2670
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
( F5S90HVX2 )
(Unit : mm)
900V 5A
N-Channel Enhancement type
HVX-2 Series Power MOSFET
Case : STO-220
Switching power supply of AC 240V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
30
Continuous Drain Current
DC
I
D
5
Continuous Drain Current
Peak)
I
DP
Pulse width10s, Duty cycle1/100
10
A
Continuous Source Current
DC
I
S
5
Total Power Dissipation
P
T
60
W
Repetitive Avalanche Current
I
AR
T
ch
= 150
5
A
Single Avalanche Energy
E
AS
T
ch
= 25
100
mJ
Repetitive Avalanche Energy
E
AR
T
ch
= 25
10
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2670 ( F5S90HVX2 )
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
900
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 900V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 2.5A, V
DS
= 10V
2.4
4.0
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 2.5A, V
GS
= 10V
2.1
2.8
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 2.5A, V
GS
= 0V
1.5
Thermal Resistance
jc
junction to case
2.08 /
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
=5A
45
nC
Input Capacitance
C
iss
1140
Reverse Transfer Capacitance
C
rss
V
DS
= 25V, V
GS
= 0V, f = 1MH
Z
23
pF
Output Capacitance
C
oss
105
Turn-On Time
t
on
I
D
= 2.5A, V
GS
= 10V, R
L
= 60
55
100
ns
Turn-Off Time
t
off
210
350
0
2
4
6
8
10
0
5
10
15
20
2SK2670
Transfer Characteristics
Tc =
-
55
C
25
C
100
C
150
C
V
DS
= 25V
TYP
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.1
1
10
100
-50
0
50
100
150
2SK2670
V
GS
= 10V
pulse test
TYP
I
D
= 2.5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50
0
50
100
150
2SK2670
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]