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Электронный компонент: M1FP3

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M1FP3
30V 1.29A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Unit : mm
SHINDENGEN
OUTLINE DIMENSIONS
RATINGS
Case : M1F
Small SMT
Super low V
F
=0.4V
FEATURES
Reversed Battery Connection Protection
DC OR output
DC/DC converter
Mobile telephone, personal computer
APPLICATION
Single
Schottky Rectifiers (SBD)
Absolute Maximum Ratings (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55125
Operating Junction Temperature
Tj
125
Maximum Reverse Voltage
V
RM
30
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load Ta=25On alumina substrate
1.29
A
50Hz sine wave, R-load Tl=109On glass-epoxy substrate
1.1
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
30
A
Electrical Characteristics (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=0.4A, Pulse measurement
Max.0.35
V
I
F
=1.1A, Pulse measurement
Max.0.40
Reverse Current
I
R
V
R
=30V, Pulse measurement
Max.2.5
mA
Junction Capacitance
Cj
f=1MHz, V
R
=10V
Typ.90
pF
jl
junction to lead
Max.20
Thermal Resistance
ja
junction to ambientOn alumina substrate
Max.108
/W
junction to ambientOn glass-epoxy substrate
Max.186
Forward Voltage
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
M1FP3
Tl=125
C [MAX]
Tl=25
C [MAX]
Pulse measurement per diode
Tl=125
C [TYP]
Tl=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
10
100
1000
M1FP3
0.1
1
10
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tl=25
C
TYP
Junction Capacitance
Reverse Current
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
M1FP3
Tl=50
C [TYP]
Tl=125
C [MAX]
Pulse measurement per diode
Tl=125
C [TYP]
Tl=100
C [TYP]
Tl=75
C [TYP]
Reverse Voltage V
R
[V]
Reverse Current I
R
[mA]
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
M1FP3
0.3
Reverse Power Dissipation
Tj = 125
C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage V
R
[V]
Reverse Power Dissipation P
R
[W]
0
t
p
V
R
T
D=t
p
/T