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Электронный компонент: BAS125W

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Semiconductor Group
1
Dec-20-1996
BAS 125W
Preliminary data
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAS 125-04W
14s
Q62702-
1 = A1
2 = C2
3=C1/A2 SOT-323
BAS 125-05W
15s
Q62702-
1 = A1
2 = A2
3=C1/C2 SOT-323
BAS 125-06W
16s
Q62702-
1 = C1
2 = C2
3=A1/A2 SOT-323
BAS 125W
13s
Q62702-
1 = A
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
25
V
Forward current
I
F
100
mA
Surge forward current (
t
10
ms)
I
FSM
500
Total Power dissipation
T
S
25 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
R
thJA
310
K/W
Junction ambient, BAS 125-04W...06W 1)
R
thJA
425
Junction - soldering point, BAS125W
R
thJS
230
Junction - soldering point, BAS125-04W...06W
R
thJS
265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
2
Dec-20-1996
BAS 125W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
I
R
-
-
-
-
200
150
nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
800
530
385
900
650
400
mV
AC Characteristics
Diode capacitance
V
R
= 0 V,
f = 1 MHz
C
T
-
-
1.1
pF
Differential forward resistance
I
F
= 5 mA,
f = 10 kHz
R
F
-
16
-
Semiconductor Group
3
Dec-20-1996
BAS 125W
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
BAS 125W
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
THJS
=
f(t
p
)
BAS 125W
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
BAS 125W
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
4
Dec-20-1996
BAS 125W
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
BAS 125-04W... (
I
F
per diode)
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
THJS
=
f(t
p
)
BAS 125-04W...
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
BAS 125-04W...
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
Dec-20-1996
BAS 125W
Forward Current
I
F
=
f(V
F
)
Diode capacitance
C
T
=
f (V
R
)
f = 1MHz
Reverse current
I
R
=
f (V
R
)
T
A
= Parameter
Differential forward resistance
R
F
=
f(I
F
)
f = 10kHz