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Электронный компонент: BAT15-04

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Type
Ordering Code
Pin Configuration
Marking
Package
(tape and reel)
1
2
3
BAT 15-04
Q62702-A504
A
C
S8
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
4
V
Forward current
I
F
110
mA
Total power dissipation
T
S
55
C
P
tot
100
mW
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
1090
K/W
Junction-soldering point
R
th JS
930
K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon Dual Schottky Diode
BAT 15-04
q
DBS mixer applications to 12 GHz
q
Low noise figure
q
Low barrier type
Semiconductor Group
1
10 94
Semiconductor Group
2
BAT 15-04
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Package Outline
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
R
= 5
A
V
(BR)
4
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F

0.23
0.32

4
V
Forward voltage matching
I
F
= 10 mA
V
F
20
mV
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
0.35
pF
Forward resistance
I
F
= 10 mA / 50 mA
R
F
5.5
SOT-23
Semiconductor Group
3
BAT 15-04
Forward current
I
F
=
f
(
V
F
)
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Reverse current
I
R
=
f
(
V
R
)