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Электронный компонент: BAT62-03W

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Semiconductor Group
1
Mar-07-1996
BAT 62-03W
Silicon Schottky Diode
Low Barrier diode for detectors up to GHz frequencies
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 62-03W L
Q62702-A1028
1 = A
2 = C
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
40
mA
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 55 ... + 150
Total power dissipation
T
S
85C
P
tot
100
mW
Thermal Resistance
Junction ambient
1)
R
thJA
650
K/W
Junction - soldering point
R
thJS
810
1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm
Semiconductor Group
2
Mar-07-1996
BAT 62-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 40 V,
T
A
= 25 C
I
R
-
-
10
A
Forward voltage
I
F
= 2 mA
V
F
-
0.58
1
V
AC Characteristics
Diode capacitance
V
R
= 0 ,
f = 1 MHz
C
T
-
0.35
0.6
pF
Case capacitance
f = 1 MHz
C
C
-
0.1
-
Differential resistance
V
R
= 0 ,
f = 10 kHz
R
0
-
225
-
k
Series inductance chip to ground
L
s
-
2
-
nH
Semiconductor Group
3
Mar-07-1996
BAT 62-03W
Forward current
I
F
=
f (V
F
)
T
A
= parameter
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
2.0
V
F
1
10
2
10
3
10
4
10
uA
I
F
T
A
= 25C
T
A
= 85C
T
A
= 125C
T
A
= -40C
Leakage current
I
R
=
f (V
R
)
T
A
= Parameter
0
5
10
15
20
25
30
V
40
V
R
-1
10
0
10
1
10
2
10
3
10
uA
I
R
TA = 25C
TA = 85C
TA = 125C
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
5
10
15
20
V
30
V
R
0.0
0.1
0.2
0.3
pF
0.5
C
T
Rectifier voltage
V
0
=
f (V
i
)
f = 900MHz
R
L
= parameter in
10
0
10
1
10
2
10
3
mV
V
E
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
mV
V
A
R
L
=5k
R
L
=20k
R
L
=100k
R
L
=200k
R
L
=1M
Semiconductor Group
4
Mar-07-1996
BAT 62-03W
Package