BAW 78M
Semiconductor Group
Jul-27-1998
1
Silicon Switching Diode
Preliminary data
Switching applications
High breakdown voltage
VPW05980
1
2
3
5
4
Type
Marking
Ordering Code
Pin Configuration
Package
BAW 78M
GDs
Q62702-A3471
1 = A
2 = C 3 n.c.
SCT-595
4 n.c. 5 = C
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
400
V
Peak reverse voltage
V
RM
400
Forward current
I
F
1
A
Peak forward current
I
FM
1
Surge forward current, t = 1
s
I
FS
10
Total power dissipation,
T
S
110 C
P
tot
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
95
K/W
Junction - soldering point
R
thJS
40
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
1998-11-01
BAW 78M
Semiconductor Group
Jul-27-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
400
-
-
V
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
Reverse current
V
R
= 400 V
I
R
-
-
1
A
Reverse current
V
R
= 400 V,
T
A
= 150 C
I
R
-
-
50
AC characteristics
-
pF
C
D
10
-
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 200 mA,
I
R
= 200 mA,
R
L
= 100
,
measured at
I
R
= 20mA
t
rr
-
1
-
ns
Test circuit for reverse recovery time
EHN00020
F
DUT
90%
10%
R
V
R
t
t
t
t
rr
p
r
t
= 20 mA
F
Oscillograph
Pulse generator:
t
p
= 100ns,
D = 0.05,
t
r
= 0.6ns,
R
i
= 50
Oscillograph:
R = 50
,
t
r
= 0.35ns,
C
1pF
Semiconductor Group
2
1998-11-01
BAW 78M
Semiconductor Group
Jul-27-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mA
1200
I
F
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
3
1998-11-01
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