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Электронный компонент: BB620

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Semiconductor Group
1
BB 620
Silicon Variable Capacitance Diode
BB 620
q
For Hyperband TV/VTR tuners, Bd I
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BB 620
Q62702-B403
red S
SOD-123
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
20
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
07.94
Semiconductor Group
2
BB 620
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
nA


10
200
Diode capacitance
f
= 1 MHz
V
R
=
1 V
V
R
= 28 V
C
T
pF
62
2.9

76
3.4
Capacitance ratio
V
R
= 1 V, 28 V;
f
= 1 MHz
C
T1
C
T28
19.5
25
Capacitance matching
V
R
= 1 V ... 28 V,
f
= 1 MHz
C
T
C
T
%
2.5
Series inductance
L
S
nH
2.8
Series resistance
C
T
= 30 pF;
f
= 100 MHz
r
S
1.3
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz