BB 831
Semiconductor Group
Aug-03-1998
1
Silicon Variable Capacitance Diode
Preliminary data
Frequency range up to 2 GHz
special design for use in TV-sat indoor units
Type
Marking
Ordering Code
Pin Configuration
Package
BB 831
white T
Q62702-B592
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Value
Symbol
Unit
V
V
R
30
Diode reverse voltage
Peak reverse voltage (R
5k
)
V
RM
35
20
mA
Forward current
I
F
Operating temperature range
-55 ...+125
T
op
C
T
stg
-55 ...+150
Storage temperature
BB 831
Semiconductor Group
Aug-03-1998
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics
nA
20
Reverse current
V
R
= 30 V
-
I
R
-
Reverse current
V
R
= 30 V, T
A
= 85 C
-
-
I
R
500
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
7.8
0.85
pF
9.8
1.2
8.8
1.02
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
8.6
-
9.5
C
T1
/C
T28
7.8
-
3
%
-
C
T
/C
T
Capacitance matching
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
Series resistance
V
R
= 1 V, f = 100 MHz
r
s
-
-
1
-
nH
Series inductance
L
s
-
1.8
1) In-line matching. For details please refer to Application Note 047
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