Semiconductor Group
1
Mar-29-1996
BSM 200 GB 120 DN2
IGBT Power Module
Half-bridge
Including fast free-wheeling diodes
Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM 200 GB 120 DN2
1200V 290A
HALF-BRIDGE 2
C67070-A2300-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 80 C
I
C
200
290
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 80 C
I
Cpuls
400
580
Power dissipation per IGBT
T
C
= 25 C
P
tot
1400
W
Chip temperature
T
j
+ 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.09
K/W
Diode thermal resistance, chip case
R
thJCD
0.18
Insulation test voltage,
t
= 1min.
V
is
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Semiconductor Group
2
Mar-29-1996
BSM 200 GB 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 8 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 125 C
V
CE(sat)
-
-
3.1
2.5
3.7
3
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
12
3
-
4
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
400
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 200 A
g
fs
108
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
13
-
nF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
2
-
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
1
-
Semiconductor Group
3
Mar-29-1996
BSM 200 GB 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
t
d(on)
-
110
220
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
t
r
-
80
160
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
t
d(off)
-
550
800
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
t
f
-
80
120
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.8
2.3
-
2.8
V
Reverse recovery time
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -2000 A/s,
T
j
= 125 C
t
rr
-
0.5
-
s
Reverse recovery charge
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -2000 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
36
12
-
-
C
Semiconductor Group
5
Mar-29-1996
BSM 200 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
50
100
150
200
250
300
A
400
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
50
100
150
200
250
300
A
400
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
50
100
150
200
250
300
A
400
I
C
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