Semiconductor Group
50
03.96
Type
Ordering Code
BSM 151 F
C67076-A1050-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
500
V
Drain-gate voltage,
R
GS
= 20 k
V
DGR
500
Gate-source voltage
V
GS
20
Continuous drain current,
T
C
= 32 C
I
D
56
A
Pulsed drain current,
T
C
= 32 C
I
D puls
224
Operating and storage temperature range
T
j
,
T
stg
55 ... + 150
C
Power dissipation,
T
C
= 25 C
P
tot
700
W
Thermal resistance
Chip-case
R
th JC
0.18
K/W
Insulation test voltage
2)
,
t
= 1 min.
V
is
2500
V
ac
Creepage distance, drain-source
16
mm
Clearance, drain-source
11
DIN humidity category, DIN 40 040
F
IEC climatic category, DIN IEC 68-1
55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
SIMOPAC
Module
BSM 151 F
V
DS
= 500 V
I
D
= 56 A
R
DS(on)
= 0.11
q
Power module
q
Single switch
q
FREDFET
q
N channel
q
Enhancement mode
q
Package with insulated metal base plate
q
Package outline/Circuit diagram: 1
1)
Semiconductor Group
51
BSM 151 F
Electrical Characteristics
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0,
I
D
= 0.25 mA
V
(BR)DSS
500
V
Gate threshold voltage
V
DS
=
V
GS
,
I
D
= 1 mA
V
GS(th)
2.1
3.0
4.0
Zero gate voltage drain current
V
DS
= 500 V,
V
GS
= 0
T
j
= 25 C
T
j
= 125 C
I
DSS
50
300
250
1000
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
I
GSS
10
100
nA
Drain-source on-state resistance
V
GS
= 10 V,
I
D
= 36 A
R
DS(on)
0.09
0.11
Dynamic Characteristics
Forward transconductance
V
DS
2
I
D
R
DS(on)max.
,
I
D
= 36 A
g
fs
20
30
S
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
i
iss
22
30
nF
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
oss
1.6
2.4
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
rss
0.65
1.0
Turn-on time
t
on
(
t
on
=
t
d (on)
+
t
r
)
V
CC
= 250 V,
V
GS
= 10 V
I
D
= 36 A,
R
GS
= 3.3
t
d (on)
60
ns
t
r
35
Turn-off time
t
off
(
t
off
=
t
d (off)
+
t
f
)
V
CC
= 250 V,
V
GS
= 10 V
I
D
= 36 A,
R
GS
= 3.3
t
d (off)
350
t
f
70
Semiconductor Group
52
Electrical Characteristics (cont'd)
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Fast-recovery reverse diode
Continuous reverse drain current
T
C
= 25 C
I
S
56
A
Pulsed reverse drain current
T
C
= 25 C
I
SM
224
Diode forward on-voltage
I
F
= 96 A ,
V
GS
= 0
V
SD
1.3
1.6
V
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 100 V
T
j
= 25 C
T
j
= 150 C
t
rr
200
350
280
500
ns
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 100 V
T
j
= 25 C
T
j
= 150 C
Q
rr
1.5
8.5
2.5
12
C
Repetitive peak reverse current
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 100 V
T
j
= 25 C
T
j
= 150 C
I
RRM
12
28
A
BSM 151 F
Semiconductor Group
53
Characteristics at
T
j
= 25 C, unless otherwise specified.
Power dissipation
P
tot
=
f
(
T
C
)
parameter:
T
j
= 150 C
Safe operating area
I
D
=
f
(
V
DS
)
parameter: single pulse,
T
C
= 25 C,
T
j
150 C (
V
DS
)
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
s pulse test
Typ. transfer characteristic
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
s ,
V
DS
= 25 V
BSM 151 F
Semiconductor Group
54
Continuous drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V,
T
j
= 150 C
Drain source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter:
I
D
= 36 A;
V
GS
= 10 V, (spread)
Drain-source breakdown voltage
V
(BR)DSS
(
T
j
) =
b
V
(BR)DSS
(25 C)
Typical capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
BSM 151 F
Semiconductor Group
55
Forward characteristics of fast-recovery
reverse diode
I
F
=
f
(
V
SD
)
parameter:
T
j
,
t
p
= 80
s (spread)
Typ. reverse recovery
Q
rr
=
f
(
T
j
)
parameter:d
i/
d
t
= 100 A/
s,
I
F
= 56 A
V
R
= 100 V
BSM 151 F
Semiconductor Group
56
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/T
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
Dpuls
= 75 A
BSM 151 F
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