Semiconductor Group
1
01/97
BUZ 21 L
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
Logic Level
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 21 L
100 V
21 A
0.085
TO-220 AB
C67078-S1338-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 C
I
D
21
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
84
Avalanche current,limited by
T
jmax
I
AR
21
Avalanche energy,periodic limited by
T
jmax
E
AR
11.5
mJ
Avalanche energy, single pulse
I
D
= 21 A,
V
DD
= 25 V,
R
GS
= 25
L
= 340 H,
T
j
= 25 C
E
AS
100
Gate source voltage
V
GS
14
V
Gate-source peak voltage,aperiodic
V
gs
20
Power dissipation
T
C
= 25 C
P
tot
75
W
Operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
1.67
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
2
01/97
BUZ 21 L
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
10
0.1
100
1
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 5 V,
I
D
= 10.5 A
R
DS(on)
-
0.075
0.085
Semiconductor Group
3
01/97
BUZ 21 L
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 10.5 A
g
fs
8
14
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-
1200
1500
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
320
580
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
160
260
Turn-on delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
d(on)
-
25
40
ns
Rise time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
r
-
110
170
Turn-off delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
d(off)
-
210
270
Fall time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
f
-
100
130
Semiconductor Group
4
01/97
BUZ 21 L
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
21
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
84
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 42 A
V
SD
-
1.35
1.7
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/s
t
rr
-
150
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/s
Q
rr
-
0.58
-
C
Semiconductor Group
5
01/97
BUZ 21 L
Power dissipation
P
tot
=
(T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
10
20
30
40
50
60
W
80
P
tot
Drain current
I
D
=
(T
C
)
parameter: V
GS
5 V
0
20
40
60
80
100
120
C
160
T
C
0
2
4
6
8
10
12
14
16
18
A
22
I
D
Safe operating area
I
D
=
(V
DS
)
parameter: D = 0.01, T
C
= 25C
-1
10
0
10
1
10
2
10
3
10
A
I
D
10
0
10
1
10
2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
t
p = 22.0s
Transient thermal impedance
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
6
01/97
BUZ 21 L
Typ. output characteristics
I
D
=
(
V
DS
)
parameter: t
p
= 80 s , T
j
= 25 C
0.0
1.0
2.0
3.0
4.0
5.0
V
7.0
V
DS
0
5
10
15
20
25
30
35
40
A
50
I
D
V
GS [V]
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
6.5
i
i
7.0
j
j
8.0
k
k
9.0
l
P
tot
= 75W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter: t
p
= 80 s, T
j
= 25 C
0
4
8
12
16
20
24
28
32
A
40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.26
R
DS (on)
V
GS
[V] =
a
3.0
V
GS
[V] =
a
a
3.5
b
b
4.0
c
c
4.5
d
d
5.0
e
e
5.5
f
f
6.0
g
g
6.5
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics I
D
= f (V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Typ. forward transconductance g
fs
= f
(
I
D
)
parameter:
t
p
= 80 s,
V
DS
2 x
I
D
x R
DS(on)max
0
10
20
30
40
A
60
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs
7
01/97
Semiconductor Group
BUZ 21 L
Drain-source on-resistance
R
DS (on)
=
(T
j
)
parameter: I
D
= 10.5 A, V
GS
= 5 V
-60
-20
20
60
100
C
160
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.28
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(T
j
)
parameter: V
GS
= V
DS
, I
D
= 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
C
160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0V,
f
= 1MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
(V
SD
)
parameter: T
j
, t
p
= 80 s
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
Semiconductor Group
8
01/97
BUZ 21 L
Avalanche energy E
AS
=
(T
j
)
parameter: I
D
= 21 A, V
DD
= 25 V
R
GS
= 25
, L = 340 H
20
40
60
80
100
120
C
160
T
j
0
10
20
30
40
50
60
70
80
90
mJ
110
E
AS
Typ. gate charge
V
GS
=
(Q
Gate
)
parameter: I
D puls
= 32 A
0
10
20
30
40
50
60
70
80
nC 100
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
=
(T
j
)
-60
-20
20
60
100
C
160
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
116
V
120
V
(BR)DSS
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