GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/8
17.12.96
HL EH PD21
D a t a s h e e t
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* P
OUT
at V
D
=3V, f=1.8GHz typ. 26.5 dBm
* High efficiency better 55 %
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Pin Configuration
1 2 3 4
Package 1)
CLY 5
CLY 5
Q62702-L90
G
S
D
S
SOT 223
Maximum ratings
Symbol
Values
Unit
Drain-source voltage
VDS
9
V
Drain-gate voltage
VDG
12
V
Gate-source voltage
VGS
-6
V
Drain current
ID
1.2
A
Channel temperature
TCh
150
C
Storage temperature
Tstg
-55...+150
C
Pulse peak power
PPulse
9
W
Total power dissipation
(Ts < 80 C)
Ts: Temperature at soldering point
Ptot
2
W
Thermal Resistance
Channel-soldering point
RthChS
35
K/W
1)
Dimensions see chapter Package Outlines
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/8
17.12.96
HL EH PD21
Electrical characteristics (TA = 25C , unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
VDS = 3 V VGS = 0 V
IDSS
600
800
1200
mA
Drain-source pinch-off current
VDS = 3 V VGS = -3.8 V
ID
-
10
100
A
Gate pinch-off current
VDS = 3 V VGS = -3.8 V
IG
-
5
20
A
Pinch-off Voltage
VDS= 3 V ID=100A
VGS(p)
-3.8
-2.8
-1.8
V
Small Signal Gain*)
VDS = 3 V ID = 350 mA f = 1.8 GHz
Pin = 0 dBm
G
10.5
11.0
-
dB
Small Signal Gain*)
VDS = 5 V ID = 350 mA f = 1.8 GHz
Pin = 0 dBm
G
11.5
12.0
-
dB
Small Signal Gain **)
VDS = 3 V ID = 350 mA f = 1.8 GHz
Pin = 0 dBm
Gp
9.0
9.5
-
dB
Output Power
VDS = 3 V ID = 350 mA f = 1.8 GHz
Pin = 19 dBm
Po
26.5
27
-
dBm
Output Power
VDS = 5 V ID = 350 mA f = 1.8 GHz
Pin = 21 dBm
Po
29.5
30
-
dBm
1dB-Compression Point
VDS = 3 V ID = 350 mA f = 1.8 GHz
P1dB
-
26.5
-
dBm
1dB-Compression Point
VDS = 5 V ID = 350 mA f = 1.8GHz
P1dB
-
30
-
dBm
Power Added Efficiency
VDS = 5 V ID = 350 mA f = 1.8 GHz
Pin = 21 dBm
PAE
40
55
-
%
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match:
ms
: MAG 0.58; ANG -143; Load Match:
ml
: MAG 0.76; ANG -116
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/8
17.12.96
HL EH PD21
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS=0.5IDSS
P1dB
D
0
5
10
15
20
25
30
35
40
[dBm]
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
[%]
[V]
Drain-Source Voltage
Gain
P1dB
0
2
4
6
8
10
12
16
[dB]
0
1
2
3
4
5
6
7
8
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
[W]
[V]
Drain-Source Voltage
14
Output Characteristics
0
0,1
0,3
0,5
0,7
0,9
0
1
2
3
4
5
6
Drain-Source Voltage [V]
VGS = 0V
VGS = -0.5V
VGS = -1V
VGS = -1.5V
VGS = -2V
PtotDC
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/8
17.12.96
HL EH PD21
typ. Common Source S-Parameters
VDS = 3 V
ID = 350 mA
Zo = 50
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0,1
0,98
-26,6
11.52
160.7
0.01024
79
0.3
-171.8
0.15
0.96
-39.4
11.15
151.4
0.015
74.3
0.31
-169.3
0.2
0.93
-51.5
10.6
142.8
0.01942
69.9
0.33
-169.2
0.25
0.9
-63.1
10.06
134.9
0.02323
66.1
0.36
-169.4
0.3
0.87
-73.8
9.49
127.4
0.02665
62.3
0.38
-169.4
0.4
0.81
-93.3
8.34
114.1
0.03245
57
0.4
-172.7
0.5
0.77
-110.3
7.33
102.5
0.03711
52.8
0.43
-175.6
0.6
0.73
-125.3
6.47
92.4
0.04138
49.7
0.45
-179.4
0.7
0.71
-138.5
5.75
83.5
0.04528
47.3
0.47
177.5
0.8
0.7
-150.4
5.14
75.2
0.0489
45.2
0.49
174.2
0.9
0.69
-161.1
4.64
67.6
0.05271
43.3
0.5
170.8
1
0.68
-170.8
4.2
60.5
0.05646
41.6
0.51
168.1
1.2
0.69
172.1
3.51
47.2
0.06393
38
0.54
161.8
1.4
0.7
157.3
2.98
35.1
0.07181
34
0.57
155.6
1.5
0.71
150.5
2.76
29.2
0.07569
32
0.58
152.9
1.6
0.72
144.1
2.56
23.6
0.07941
29.7
0.59
149.4
1.8
0.74
132.2
2.22
12.6
0.08684
24.8
0.62
143.2
2
0.76
121.4
1.94
2.1
0.09377
19.7
0.65
137
2.2
0.78
111.5
1.7
-7.9
0.0998
14.6
0.68
130.9
2.4
0.8
102.5
1.49
-17.4
0.10532
9.4
0.7
124.7
2.5
0.81
98
1.39
-21.9
0.1076
6.7
0.71
121.1
3
0.85
79.2
1.01
-42.1
0.11638
-6
0.76
105.6
3.5
0.87
64
0.75
-58.1
0.12148
-17.2
0.8
91.4
4
0.89
51.4
0.59
-70.6
0.12571
-27.3
0.84
78.2
4.5
0.9
39.8
0.48
-82.2
0.12914
-37.2
0.86
65.6
5
0.92
29
0.41
-93.1
0.13429
-47
0.88
53.1
5.5
0.92
18.4
0.35
-103.4
0.13892
-57
0.9
40.3
6
0.92
8.3
0.31
-112.4
0.14142
-66.8
0.91
27
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 5/8
17.12.96
HL EH PD21
typ. Common Source S-Parameters
VDS = 5 V
ID = 350 mA
Zo = 50
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.98
-26.3
13.02
160.1 0.00906
79.1
0.15
-153.9
0.15
0.95
-38.8
12.58
150.7 0.01326
73.7
0.17
-148.4
0.2
0.92
-50.8
11.98
141.9 0.01702
69.3
0.2
-148.5
0.25
0.89
-62.1
11.34
133.7 0.02026
65.6
0.23
-149.9
0.3
0.86
-72.6
10.68
126.1 0.02304
61.8
0.26
-150.6
0.4
0.8
-91.7
9.39
112.4 0.02771
57
0.29
-155.5
0.5
0.76
-108.3
8.24
100.6 0.03151
53.4
0.33
-159.4
0.6
0.72
-122.9
7.27
90.2
0.0348
51.2
0.35
-164.1
0.7
0.7
-135.9
6.45
80.9 0.03798
49.7
0.37
-167.6
0.8
0.69
-147.6
5.77
72.4 0.04099
48.8
0.4
-171.3
0.9
0.68
-158.1
5.2
64.5 0.04435
47.9
0.41
-174.9
1
0.68
-167.7
4.7
57 0.04784
47.1
0.44
-177.8
1.2
0.68
175.3
3.92
43 0.05543
45.2
0.47
175.4
1.4
0.7
160.4
3.31
30.1 0.06413
42.2
0.51
168.7
1.5
0.71
153.6
3.06
24 0.06865
40.6
0.54
165.5
1.6
0.72
147.1
2.83
17.9 0.07318
38.5
0.55
161.7
1.8
0.75
135
2.43
6.2 0.08237
33.7
0.6
154.6
2
0.77
123.9
2.1
-5 0.09121
28.3
0.64
147.5
2.2
0.8
113.7
1.82
-15.6 0.09917
22.5
0.67
140.4
2.4
0.82
104.3
1.58
-25.7 0.10617
16.7
0.7
133.3
2.5
0.83
99.7
1.47
-30.4 0.10916
13.6
0.72
129.1
3
0.87
80.1
1.02
-51.4 0.12055
-0.8
0.78
111.6
3.5
0.89
64.4
0.74
-67.4 0.12631
-13.4
0.83
95.8
4
0.91
51.5
0.56
-79.4 0.13053
-24.5
0.86
81.3
4.5
0.92
39.6
0.45
-90.2 0.13384
-35
0.88
67.9
5
0.93
28.8
0.37
-100 0.13894
-45.2
0.91
54.9
5.5
0.93
18.1
0.31
-109.2
0.1434
-55.5
0.92
41.7
6
0.93
8
0.27
-117.1 0.14538
-65.6
0.92
28
Additional S-Parameter available on CD
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 6/8
17.12.96
HL EH PD21
Total Power Dissipation
Ptot = f(Ts)
Permissible Pulse Load
Ptotmax/PtotDC = f(tp)
Ptot
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
[W]
0
50
100
150
Ts
C
O
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 7/8
17.12.96
HL EH PD21
CLY5 Power GaAs-FET Matching Conditions
Definition:
Measured Data:
Typ
f
[GHz]
VDS
[V]
ID
[mA]
P-1dB
[dBm]
Gain
[dB]
ms
MAG
ms
ANG
ml
MAG
ml
ANG
CLY5
0.9
3
350
25.8
15.6
0.50
133
0.70
-154
5
350
29.2
16.3
0.52
144
0.61
-156
6
350
29.8
17.2
0.58
143
0.54
-168
1.5
3
350
26.5
11.0
0.63
-167
0.74
-126
5
350
30.0
11.5
0.59
-164
0.69
-126
6
350
30.6
12.6
0.64
-165
0.55
-132
1.8
3
350
26.5
9.5
0.58
-143
0.76
-116
5
350
30.0
10.0
0.56
-140
0.71
-118
6
350
30.5
10.0
0.58
-133
0.69
-119
2.4
3
350
25.0
8.4
0.62
-108
0.68
-105
5
350
29.1
8.7
0.60
-109
0.66
-105
6
350
30.5
8.9
0.65
-112
0.68
-106
Note: Gain is small signal gain @
ms and
ml
GaAs FET
CLY 5
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 8/8
17.12.96
HL EH PD21
Increased Power Handling Capability Pulsed Applications
577s
4,615ms
GSM/PCN TDMA-Frame:
Take value
P
P
tot
tot
max
DC
from diagram permissible pulse load -->
P
P
1.4
tot
tot
max
DC
Take value
P
P
tot
tot
max
DC
from diagram permissible pulse load -->
P
P
1.5
tot
tot
max
DC
D =
t
T
ms
4.615ms
p
=
=
0 577
0 125
.
.
P = 2W
1.4 = 2.8W
tot
417s
10ms
DECT TDMA-Frame:
D =
t
T
ms
4.615ms
p
=
=
10
0 0417
.
P = 2W
1.5 = 3W
tot
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