Semiconductor Group
1
1998-08-28
VEO06989
Besondere Merkmale
q
Gehusebauform: 0603
q
Industriestandard bzgl. Ltpadraster
q
geringe Bauteilhhe
q
fr IR-Ltung geeignet
q
fr Hinterleuchtungen und als opt. Indikator einsetzbar
q
gegurtet (8-mm-Filmgurt)
Features
q
0603 package
q
Industry standard footprint
q
low profile
q
suitable for IR reflow soldering process
q
for use as optical indicator and backlighting
q
available taped on reel (8 mm tape)
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 20 mA
V
(mlm)
Bestellnummer
Ordering Code
LG Q971-KO
green
colorless clear
6.30 (15 typ.)
120 (typ.)
Q62702-P5098
CHIPLED
LG Q971
Semiconductor Group
2
1998-08-28
LG Q971
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
30 ... + 85
C
Lagertemperatur
Storage temperature range
T
stg
40 ... + 85
C
Sperrschichttemperatur
Junction temperature
T
j
+ 95
C
Durchlastrom
Forward current
I
F
20
mA
Stostrom
Surge current
t
p
10
s,
D
= 0.005
I
FM
0.1
A
Sperrspanung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
P
tot
55
mW
Wrmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
R
th JA
800
K/W
Semiconductor Group
3
1998-08-28
LG Q971
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
570
nm
Spektrale Bandbreite
(typ.)
Spectral bandwidth
(typ.)
I
F
= 20 mA
28
nm
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
2
160
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 20 mA
V
F
V
F
2.2
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
A
A
Temperaturkoeffizient von
dom
(
I
F
= 20 mA)
Temperature coefficient of
dom
(
I
F
= 20 mA)
TC
0.06
nm/K
Temperaturkoeffizient von
peak
,
I
F
= 20 mA
(typ.)
Temperature coefficient of
peak
,
I
F
= 20 mA
(typ.)
TC
0.10
nm/K
Temperaturkoeffizient von
(
I
F
= 20 mA)
Temperature coefficient of
(
I
F
= 20 mA)
TC
0.02
nm/K
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
TC
V
1.2
mV/K
Temperaturkoeffizient von
I
V
, I
F
= 20 mA (typ.)
Temperature coefficient of
I
V
, I
F
= 20 mA (typ.)
TC
Iv
0.6
%/K
Semiconductor Group
4
1998-08-28
LG Q971
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V(
) =
spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
OHL00406
400
0
0.2
0.4
0.6
0.8
1.0
nm
%
rel
0.7
0.5
0.3
0.1
450
500
550
600
650
700
750
V
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0
10
20
40
30
OHL00408
50
60
70
80
90
100
0
20
40
60
80
100
120
Semiconductor Group
5
1998-08-28
LG Q971
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
10
-3
V
OHL00427
F
F
V
mA
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
3.2
-2
10
-1
10
0
10
1
10
2
10
F
0
0
OHL00428
A
T
5
10
15
20
25
30
mA
C
10 20 30 40 50 60 70 80
100
V
V (20 mA)
10
-1
0
10
10
1
2
10
mA
10
-3
5
OHL00426
F
5
-2
10
5
-1
10
0
10
1
10
5
5
Semiconductor Group
6
1998-08-28
LG Q971
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
GEO06989
0.8
(0.4)
(1.08)
LED die
(0.3)
Resin
P.C. board
0.3
0.15
(0.3)
Soldering terminal
Cathode mark
Polarity
0.05
0.05
1.6
0.15
1.0
Soldering terminal
0.3
0.8
(1.2)
0.05
0.05
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