13.07.1998
Semiconductor Group
Page 1
HITFET
BTS 149
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Status feedback with external input resistor
Analog driving possible
Product Summary
Drain source voltage
V
60
V
DS
On-state resistance
R
DS(on)
18
m
A
Current limit
I
D(lim)
30
Nominal load current
A
I
D(ISO)
19
Clamping energy
mJ
E
AS
6000
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
E S D
H I T F E T
Source
Current
1
3
Over-
protection
temperature
Short circuit
protection
+
dv/dt
limitation
lim itation
V bb
Short circuit
protection
L O A D
2
Overload
protection
M
13.07.1998
Semiconductor Group
Page 2
BTS 149
Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter
Symbol
Unit
Value
Drain source voltage
V
DS
60
V
Drain source voltage for short circuit protection
V
DS(SC)
32
Continuous input current
1)
-0.2V
V
IN
10V
V
IN
< -0.2V or
V
IN
> 10V
I
IN
no limit
|
I
IN
|
2
mA
Operating temperature
T
j
C
- 40 ... +150
Storage temperature
T
stg
- 55 ... +150
Power dissipation
T
C
= 25 C
178
W
P
tot
Unclamped single pulse inductive energy
I
D(ISO)
= 19 A
6000
mJ
E
AS
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
3000
V
Load dump protection
V
LoadDump
2)
=
V
A
+
V
S
V
IN
=low or high;
V
A
=13.5 V
t
d
= 400 ms,
R
I
= 2
,
I
D
=0,5*19A
t
d
= 400 ms,
R
I
= 2
,
I
D
= 19A
110
92
V
LD
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
0.7
K/W
75
R
thJA
junction - ambient:
SMD version, device on PCB:
3)
R
thJA
45
1
A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for Drain connection. PCB is vertical
without blown air.
13.07.1998
Semiconductor Group
Page 3
BTS 149
Electrical Characteristics
Parameter
Symbol
Unit
Values
max.
typ.
min.
at T
j
=25C, unless otherwise specified
Characteristics
-
Drain source clamp voltage
T
j
= - 40 ...+ 150C,
I
D
= 10 mA
73
V
V
DS(AZ)
60
-
I
DSS
-
Off state drain current
V
DS
= 32 V,
T
j
= -40...+150 C,
V
IN
= 0 V
25
A
1.7
2.2
V
IN(th)
1.3
Input threshold voltage
I
D
= 3,9 mA
V
-
100
A
I
IN(1)
-
Input current - normal operation,
I
D
<
I
D(lim)
:
V
IN
= 10 V
400
Input current - current limitation mode,
I
D
=
I
D(lim)
:
V
IN
= 10 V
1000
I
IN(2)
-
3000
I
IN(3)
1500
Input current - after thermal shutdown,
I
D
=0 A:
V
IN
= 10 V
6000
-
-
-
-
I
IN(H)
500
300
Input holding current after thermal shutdown
T
j
= 25 C
T
j
= 150 C
18
30
22
44
m
R
DS(on)
-
-
On-state resistance
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 25 C
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 150 C
14
25
On-state resistance
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 25 C
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 150 C
18
36
m
R
DS(on)
-
-
I
D(ISO)
19
Nominal load current (ISO 10483)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 C
A
13.07.1998
Semiconductor Group
Page 4
BTS 149
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
=25C, unless otherwise specified
min.
typ.
max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V,
V
DS
= 12 V
I
D(SCp)
-
130
-
A
Current limit
1)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350 s,
T
j
= -40...+150 C
I
D(lim)
30
40
55
Dynamic Characteristics
s
t
on
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
40
100
-
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
-
t
off
70
170
V/s
Slew rate on 70 to 50%
V
bb
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
-dV
DS
/dt
on
3
1
-
Slew rate off 50 to 70%
V
bb
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
1
3
dV
DS
/dt
off
-
Protection Functions
T
jt
C
Thermal overload trip temperature
165
-
150
E
AS
Unclamped single pulse inductive energy
I
D
= 19 A,
T
j
= 25 C,
V
bb
= 32 V
I
D
= 19 A,
T
j
= 150 C,
V
bb
= 32 V
-
-
-
-
6000
1800
mJ
Inverse Diode
V
SD
Inverse diode forward voltage
I
F
= 5*19A,
t
m
= 300
s,
V
IN
= 0 V
1.1
-
-
V
1
Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition
13.07.1998
Semiconductor Group
Page 5
BTS 149
Block Diagramm
Terms
Inductive and overvoltage output clamp
HITFET
IN
D
VIN
ID
VDS
1
IIN
S
Vbb
RL
2
3
HITFET
V
Z
D
S
Short circuit behaviour
V IN
ID
I D(SCp)
t 0
tm
t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD
I
Source
ESD zener diodes are not designed
for DC current > 2 mA @
V
IN
>10V.
t0: Turn on into a short circuit
tm : Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
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