BAR66
Semiconductor Group
1
Edition A01, 05.05.94
Type
Marking
Ordering Code
(taped)
Pin Configuration
1 2 3
Package 1)
BAR66
PMs
Q62702-A1473
A1
C2
C1/A2
SOT-23
Maximum Ratings
Parameter
Symbol
BAR66
Unit
Reverse voltage
V
R
150
V
Forward current
I
F
200
mA
Forward current (t
p
= 1
S)
I
F
20
A
Power dissipation T
S
25C 1)
P
tot
250
mW
Operating temperature range
T
op
-55...+150
C
Storage temperature range
T
stg
-55...+150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
450
K/W
____________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode Array
l
l
Surge protection device
l
Two PIN diodes, series configuration
l
Designed for surge overvoltage clamping in
antiparallel connection
BAR66
Semiconductor Group
2
Edition A01, 05.05.94
Characteristics per Diode
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
Reverse current
I
R
= 5
A
V
R
150
-
-
V
Forward voltage
I
F
= 50 mA
V
F
-
0.95
1.2
V
Diode capacitance
V
R
= 35 V,
f=1M Hz
V
R
= 0 V ,
f=100 MHz
C
T
-
-
0.4
0.35
0.6
-
pF
Forward resistance
I
F
= 10 mA,
f = 100 MHz
r
f
-
1.5
-
Charge carrier lifetime
I
F
=10 mA,
I
R
= 6 mA,
I
R
= 3 mA
L
-
0.7
-
s
Series inductance
L
S
-
2
-
nH
Dioden capacitance
C
T
=
f
(
V
R
*
)
f = 1 MHz
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