BFP 520
Semiconductor Group
Sep-09-1998
1
SIEGET
45
NPN Silicon RF Transistor
Preliminary data
For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding
G
a
= 20 dB
Noise Figure
F = 0.95 dB
For oscillators up to 15 GHz
Transition frequency
f
T
= 45 GHz
Gold metalization for high reliability
SIEGET
45 - Line
Siemens Grounded Emitter Transistor
45 GHz
f
T
- Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 520
APs
Q62702-F1794
1 = B
2 = E
3 = C
4 = E
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
2.5
V
Collector-base voltage
V
CBO
12
V
Emitter-base voltage
V
EBO
1
V
Collector current
I
C
40
mA
Base current
I
B
4
mA
Total power dissipation,
T
S
105 C
P
tot
100
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ...+150
C
Storage temperature
T
stg
-65 ...+150
C
Thermal Resistance
Junction - soldering point
1)
R
thJS
450
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
2.5
3
3.5
V
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
I
CBO
-
-
200
nA
Emitter-base cutoff current
V
EB
= 1.5 V,
I
C
= 0
I
EBO
-
-
35
nA
DC current gain
I
C
= 20 mA,
V
CE
= 4 V
h
FE
50
80
150
-
AC characteristics
-
GHz
-
45
f
T
Transition frequency
I
C
= 30 mA,
V
CE
= 2 V,
f = 2 GHz
-
pF
0.06
-
C
cb
Collector-base capacitance
V
CB
= 2 V,
f = 1 MHz
-
pF
C
ce
0.3
-
Collector-emitter capacitance
V
CE
= 2 V,
f = 1 MHz
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
pF
C
eb
0.35
-
-
F
-
Noise figure
I
C
= 2 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f = 1.8 GHz
dB
0.95
-
dB
23
-
G
ms
Power gain
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f = 1.8 GHz
-
dB
|
S
21
|
2
Insertion power gain
I
C
= 20 mA,
V
CE
= 2 V,
f = 1.8 GHz,
Z
S
=
Z
L
= 50
21
-
-
-
Third order intercept point at output
V
CE
= 2 V,
f = 1.8 GHz, Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
I
C
= 20 mA
I
C
= 7 mA
dBm
IP
3
25
17
-
-
1dB compression point
V
CE
= 2 V,
f = 1.8 GHz, Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
I
C
= 20 mA
I
C
= 7 mA
dBm
-
-
P
-1dB
-
-
12
5
1)
Gms = |S21 / S12|
2)
Gma = |S21 / S12| (k-(k2-1)1/2)
Semiconductor Group
2
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
3
Common Emitter S-Parameters
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
CE
= 2 V, /
C
= 20 mA
0.01
0.1
0.5
1
2
3
4
5
6
0.7244
0.7251
0.6368
0.4768
0.2816
0.225
0.2552
0.3207
0.3675
-0.7
-8.4
-40.7
-73.6
-123.8
-166
156.2
133.6
118.7
32.273
31.637
27.293
19.6
11.02
7.48
5.636
4.488
3.683
178.6
171.4
140.7
113.5
84.9
67.6
53
39.7
27.5
0.0007
0.0041
0.0194
0.0351
0.00574
0.0788
0.0994
0.1177
0.1343
69.4
92.8
75.9
66.5
56.3
49.2
41.5
32.9
24.7
0.9052
0.9363
0.8523
0.6496
0.3818
0.2407
0.1544
0.095
0.0545
1.2
-4.4
-26.7
-46
-64.6
-73.6
-95.3
-128.9
177.6
Common Emitter Noise Parameters
f
F
min
1)
G
a
1)
opt
R
N
r
n
F
50
2)
|
S
21
|
2 2)
GHz
dB
dB
MAG
ANG
-
dB
dB
V
CE
= 2 V,
I
C
= 2 mA
0.9
1.8
2.4
3
4
5
6
0.72
0.95
1.07
1.3
1.35
1.7
1.95
21.5
20
16
14.5
11.6
9.5
8
0.64
0.49
0.45
0.4
0.26
0.14
0.12
14
30
41
54
82
128
151
21.5
19
18
16.5
12.5
9
8
0.43
0.38
0.36
0.33
0.25
0.18
0.16
1.75
1.55
1.6
1.7
1.6
1.85
1.95
16.1
15.14
14.07
13.13
11.49
9.87
8.28
V
CE
= 2 V,
I
C
= 5 mA
0.9
1.8
2.4
3
4
5
6
0.89
1.08
1.12
1.32
1.35
1.6
1.8
22
20.5
18
16.2
13.5
11.5
10.5
0.49
0.38
0.34
0.29
0.156
0.08
0.07
12
22
33
45
71
120
150
16
14
14
13.5
11
10
8
0.32
0.28
0.28
0.27
0.22
0.2
0.16
1.5
1.38
1.4
1.5
1.45
1.65
1.8
21.94
19.34
17.54
16.01
13.82
11.93
10.23
1) Input matched for minimum noise figure, output for maximum gain 2)
Z
S
=
Z
L
= 50
For more and detailed S- and Noise-parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
3
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
tbd
aA
VAF =
tbd
V
NE =
tbd
-
VAR =
tbd
V
NC =
tbd
-
RBM =
tbd
CJE =
tbd
fF
TF =
tbd
ps
ITF =
tbd
mA
VJC =
tbd
V
TR =
tbd
ns
MJS =
tbd
-
XTI =
tbd
-
BF =
tbd
-
IKF =
tbd
A
BR =
tbd
-
IKR =
tbd
A
RB =
tbd
RE =
tbd
VJE =
tbd
V
XTF =
tbd
-
PTF =
tbd
deg
MJC =
tbd
-
CJS =
tbd
fF
XTB =
tbd
-
FC =
tbd
-
NF =
tbd
-
ISE =
tbd
fA
NR =
tbd
-
ISC =
tbd
fA
IRB =
tbd
mA
RC =
tbd
MJE =
tbd
-
VTF =
tbd
V
CJC =
tbd
fF
XCJC =
tbd
-
VJS =
tbd
V
EG =
tbd
eV
TNOM
tbd
K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
tbd
fA
RS =
tbd
N =
tbd
-
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L
BI
=
0.47
nH
L
BO
=
0.53
nH
L
EI
=
0.23
nH
L
EO
=
0.05
nH
L
CI
=
0.56
nH
L
CO
=
0.58
nH
C
BE
=
136
fF
C
CB
=
6.9
fF
C
CE
=
134
fF
EHA07389
L
BI
BE
C
BO
L
C
EI
L
L
EO
CB
C
CI
L
CO
L
CE
C
Transistor
C'-E'-
B
Diode
E
E'
C'
B'
Chip
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
5
For non-linear simulation:
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
If you need simulation of thereverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
Simulation of package is not necessary for frequenties < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
EHA07307
C
E
E
B
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
Semiconductor Group
5
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
6
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mW
120
P
tot
T
S
T
A
Transition frequency
f
T
=
f (I
C
)
f = 2 GHz
V
CE
= parameter in V
0
5
10
15
20
25
30
35
mA
45
I
C
0
4
8
12
16
20
24
28
32
36
40
44
GHz
52
f
T
2
1
0.75
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-
P
max
/ P
DC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
6
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
7
Power gain
G
ma
,
G
ms
, |
S
21
|
2
=
f ( f )
V
CE
= 2V, I
C
= 20 mA
0.0
1.0
2.0
3.0
4.0
GHz
6.0
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
G
ms
G
ma
|
S
21
|
2
Power gain
G
ma
,
G
ms
=
f (I
C
)
V
CE
= 2V
f = parameter in GHz
0
5
10
15
20
25
30
35
mA
45
I
C
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain
G
ma
,
G
ms
=
f (V
CE
)
I
C
= 20 mA
f = parameter in GHz
0.0
0.5
1.0
1.5
2.0
V
3.0
V
CE
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
= 0,
f = 1MHz
0.0
0.5
1.0
1.5
2.0
V
3.0
V
CB
0.00
0.05
0.10
0.15
0.20
0.25
pF
0.35
C
cb
Semiconductor Group
7
1998-11-01
BFP 520
Semiconductor Group
Sep-09-1998
8
Noise figure
F = f (I
C
)
V
CE
= 2 V,
f = 1.8 GHz
0
5
10
15
20
25
30
mA
40
I
C
0.0
0.5
1.0
1.5
2.0
dB
3.0
F
Zs = 50Ohm
Zs = Zsopt
Noise figure
F = f (I
C
)
V
CE
= 2 V,
Z
S
=
Z
Sopt
0
5
10
15
20
25
30
mA
40
I
C
0.0
0.5
1.0
1.5
2.0
dB
3.0
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure
F = f ( f )
V
CE
= 2 V,
Z
S
=
Z
Sopt
0.0
1.0
2.0
3.0
4.0
5.0 GHz
6.5
f
0.0
0.5
1.0
1.5
2.0
dB
3.0
F
IC = 5 mA
IC = 2 mA
Source impedance for min.
Noise Figuren vers. Frequency
V
CE
= 2 V,
I
C
= 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
6GHz
0.45GHz
0.9GHz
1.8GHz
2mA
5mA
Semiconductor Group
8
1998-11-01
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