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Электронный компонент: Q62702-M0002

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Semiconductor Group
1
PNP Silicon Transistors
SMBT 5086
SMBT 5087
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 5086
SMBT 5087
Q62702-M0002
Q68000-A8319
s2P
s2Q
SOT-23
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 71 C
P
tot
mW
Storage temperature range
T
stg
Collector-emitter voltage
V
CE0
V
Thermal Resistance
Junction - ambient
2)
R
th JA
310
K/W
3
330
150
65 ... + 150
50
Collector current
I
C
mA
50
Junction - soldering point
R
th JS
240
50
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
Semiconductor Group
2
SMBT 5086
SMBT 5087
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 1 mA
V
(BR)CE0
50
nA
nA
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0,
T
A
= 150 C
I
CB0




10
50
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
3
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
0.3
DC current gain
I
C
= 100
A,
V
CE
= 5 V
SMBT 5086
SMBT 5087
I
C
= 1 mA,
V
CE
= 5 V
SMBT 5086
SMBT 5087
I
C
= 10 mA,
V
CE
= 5 V
SMBT 5086
SMBT 5087
h
FE
150
250
150
250
150
250





500
800



MHz
Transition frequency
I
C
= 0.5 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
40
AC characteristics
Small-signal current gain
I
C
= 1 mA,
V
CE
= 5 V,
f
= 1 kHz
SMBT 5086
I
C
= 1 mA,
V
CE
= 5 V,
f
= 1 kHz
SMBT 5087
h
fe
150
250

600
900
Collector-base breakdown voltage
I
C
= 100
A
V
(BR)CB0
50
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
V
BEsat
0.85
pF
Output capacitance,
V
CB
= 5 V,
f
= 1 MHz
C
obo
4
dB
dB
dB
dB
Noise figure
I
C
= 100
A,
V
CE
= 5 V,
f
= 1 kHz,
R
S
= 3 k
SMBT 5086
SMBT 5087
I
C
= 2 mA,
V
CE
= 5 V,
f
= 10 Hz to 15 kHz,
R
S
= 10 k
SMBT 5086
SMBT 5087
NF




3
2
3
2
1)
Pulse test conditions:
t
300
s,
D
2 %.
Semiconductor Group
3
SMBT 5086
SMBT 5087
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Semiconductor Group
4
SMBT 5086
SMBT 5087
Base-emitter saturation voltage
I
C
=
f
(
V
BE sat
),
h
FE
= 40
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 1 V
Collector-emitter saturation voltage
I
C
=
f
(
V
CE sat
),
h
FE
= 40
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1 V
Semiconductor Group
5
SMBT 5086
SMBT 5087
Collector cutoff current
I
CB0
=
f
(
T
A
)
Noise figure
NF
=
f
(
I
C
)
I
C
= 0.2 mA,
R
S
= 2 k
,
V
CE
= 5 V
Noise figure
NF
=
f
(
V
CE
)
I
C
= 0.2 mA,
R
S
= 2 k
,
f
= 1 kHz
Noise figure
NF
=
f
(
I
C
)
V
CE
= 5 V,
f
= 120 kHz
Semiconductor Group
6
SMBT 5086
SMBT 5087
Noise figure
NF
=
f
(
I
C
)
V
CE
= 5 V,
f
= 1 kHz
Noise figure
NF
=
f
(
I
C
)
V
CE
= 5 V,
f
= 10 kHz