Semiconductor Group
1
02.97
Laser Diode on Submount
SPL CGxx
1.0 W cw (Class 4 Laser Product)
(SFH 4804x2)
Features
Efficient radiation source for cw and pulsed operation
Reliable InGa(Al)As strained quantum-well material
Single emitting area 200 m
1 m
Small C-type copper submount for OEM designs
Applications
Pumping solid state lasers (Nd: YAG, Yb: YAG, ...)
Laser soldering, heating, illumination
Printing, marking, surface processing
Medical applications
Testing and measurement applications
Type
Old Type
(as of Oct. 1996)
Wavelength
*)
Ordering Code
SPL CG81
SPL CG85
SPL CG94
SPL CG98
SFH 480402
SFH 480442
808 nm
850 nm
940 nm
980 nm
Q62702-P358
on request
Q62702-P1617
on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(
T
A
= 25 C)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Output power (continuous wave)
1)
P
opt
1.1
W
Output power (quasi-continuous wave)
1)
(
t
p
150
s, duty cycle
1
%
)
P
qcw
1.5
W
Reverse voltage
V
R
3
V
Operating temperature
2)
T
op
10
...
+ 60
C
Storage temperature
2)
T
stg
40
...
+ 85
C
Soldering temperature, max. 10 s
T
s
140
C
1) Optical power measurements refer to a detector with NA = 0.6
2) Bedewing is excluded
SPL CGxx
(SFH 4804x2)
Semiconductor Group
2
Characteristics
(
T
A
= 25 C)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Emission wavelength
1)
peak
803
840
935
808
850
940
813
860
945
nm
Spectral width (FWHM)
1)
2
nm
Output power
2)
P
opt
1.0
W
Differential efficiency
2)
808
nm
850 nm
940 nm
0.75
0.75
0.70
0.95
0.85
0.80
1.1
1.0
0.9
W/A
Threshold current
808 nm
850 nm
940 nm
I
th
0.40
0.30
0.30
0.45
0.40
0.35
0.55
0.50
0.40
A
Operating current
1)
808
nm
850 nm
940 nm
I
op
1.3
1.3
1.4
1.5
1.5
1.6
1.8
1.8
1.8
A
Operating voltage
1)
V
op
2.0
V
Differential series resistance
r
s
0.2
0.4
Characteristic temperature (threshold)
3)
T
0
150
K
Temperature coefficient of operating
current
I
op
/
T
0.5
%/K
Temperature coefficient of wavelength
4)
/
T
0.25
0.27
0.30
nm/K
Thermal resistance (junction
heat sink)
R
th JA
10
K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(
T
2
) =
I
th
(
T
1
)
exp(
T
2
T
1
)/
T
0
4) Depending on emission wavelength
SPL CGxx
(SFH 4804x2)
Semiconductor Group
3
09.96
Optical Characteristics (
T
A
= 25 C)
Radiant Power
P
opt
vs
I
F
Mode Spectrum
I
rel
vs
(
P
opt
= 1.0 W)
Farfield Distribution
Parallel to Junction
I
rel
vs
||
Farfield Distribution
Perpendicular to Junction
I
rel
vs
SPL CGxx
(SFH 4804x2)
Semiconductor Group
4
Notes for Operation
1. Eye
Protection
This laser is a Class 4 Laser product.
Refer to the relevant safety regulations for protection during handling and operation.
2. Overload
Protection
The specified values are valid as long as the diode has not been not overloaded. Voltage
spikes from the power supply unit, even when applied for nanoseconds only, may cause
irreversible damage to the laser diode. Such spikes may occur when the power supply is
turned on or off, or they may reach the laser diode from the line via the coupling capacitance
of electronically controlled devices.
The power supply should therefore be provided with appropriate protection circuits.
Handling Notes
1. Package
To avoid electrostatic damages it is recommended to observe the same rules as for handling
MOS-devices.
2. Mounting
When soldering, gluing or clamping, do not exceed the following limits:
max. soldering temperature:
140 C
max. soldering time:
10 s
max. curing temperature for adhesives:
100 C
Any deformation of the heat sink by clamping must be avoided.
3. Electrical
Connection
The cathode may be bonded by spot-welding, clamping or soldering.
In all these cases ESD-guidelines must be followed.
SPL CGxx
(SFH 4804x2)
Semiconductor Group
5
09.96
Package Outlines
(Dimensions in mm, unless specified).
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