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Электронный компонент: Q62702-P1702

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SFH 507
Semiconductor Group
1
Typ
Type
Trgerfrequ.
Carrier
Frequency
kHz
Bestellnr.
Ordering Code
Typ
Type
Trgerfrequ.
Carrier
Frequency
kHz
Bestellnr.
Ordering Code
SFH 507-30
30
Q62702-P1701 SFH 507-38
38
Q62702-P1704
SFH 507-33
33
Q62702-P1702
SFH 507-40
40
Q62702-P1705
SFH 507-36
36
Q62702-P1703
SFH 507-56
56
Q62702-P1822
Wesentliche Merkmale
q
Empfngermodul fr bertragungsprotokolle
mit kurzen Pulspaketen (
N
6 Pulse pro Bit)
q
Fotodiode mit integriertem Verstrker
q
Gehuse schwarz eingefrbt: Vergu optimiert
fr eine Wellenlnge von 950 nm
q
Hohe Strsicherheit
q
Geringe Stromaufnahme (0.5 mA typ.)
q
5 V Betriebsspannung
q
Hohe Empfindlichkeit
q
TTL und CMOS kompatibel
q
Mgliche Datenbertragungsrate 2.4 kbit/s
(
N
= 6,
f
0
= 56 kHz)
Anwendungen
q
Empfnger fr IR-Fernsteuerungen
Features
q
Receiver module for transmission codes
with short bursts (
N
6 pulses per bit)
q
Photodiode with hybride integrated circuit
q
Black epoxy resin: daylight filter optimized
for 950 nm
q
High immunity against ambient light
q
Low power consumption (0.5 mA typ.)
q
5 V supply voltage
q
High sensitivity (internal shield case)
q
TTL and CMOS compatibility
q
2.4 kbit/s data transmission possible
(
N
= 6,
f
0
= 56 kHz)
Applications
q
IR-remote control preamplifier module
IR-Empfnger fr Fernbedienungen (fr kurze Burst)
IR-Receiver for Remote Control Systems (for Short Burst)
SFH 507
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
fex06841
GEX06910
V
OUT
GND
9.7
8.7
12.9
12.1
16.3
15.9
30.1
31.1
1.5
S
V
Surface not flat
3.85
4.45
R 2.75
0.4
1.7
1.1
4.3
3.7
6.1
5.5
0.50
3x2.54 = 7.62
0.65
0.50
2.54
0.8 max.
10.3
9.7
05.97
Semiconductor Group
2
SFH 507
Blockschaltbild
Block Diagram
Grenzwerte (
T
A
= 25
C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operation and storage temperature range
T
A
,
T
stg
25 ... + 85
C
Sperrschichttemperatur
Junction temperature range
T
j
100
C
Lttemperatur
Ltstelle 1 mm vom Gehuse; Ltzeit
t
10 s
Soldering temperature
soldering joint
1 mm distance from
package, soldering time
t
10 s
T
S
260
C
Betriebsspannung
Pin 2
Supply voltage
V
S
0.3 ... + 6.0
V
Betriebsstrom
Pin 2
Supply current
I
CC
5
mA
Ausgangsspannung
Pin 3
Output voltage
V
OUT
0.3 ... + 6.0
V
Ausgangsstrom
Pin 3
Output current
I
OUT
5
mA
Verlustleistung
Total power dissipation
T
A
85
C
P
tot
50
mW
OHF02198
Demodulator
Bandpass
AGC
Control
Input
2
3
1
OUT
GND
V
S
PIN
Circuit
100 k
SFH 507
Semiconductor Group
3
1)
In Verbindung mit einer typ. SFH 415 bei Betrieb mit
I
F
= 0.5 A wird eine Reichweite von ca. 35 m erreicht.
1)
Together with an IRED SFH 415 under operation conditions of
I
F
= 0.5 A a distance of 35 m is possible.
Kennwerte (
T
A
= 25
C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebsspannung
Supply voltage
V
S
typ. 5.0
(4.5 ... 5.5)
V
Bestrahlungsstrke (Testsignal, s. Figure 2)
Threshold irradiance (test signal, see Fig. 2)
E
e min(30-40 kHz)
1)
E
e min(56 kHZ)
1)
E
e max
1)
typ. 0.4 (< 0.6)
typ. 0.45 (< 0.7)
30
mW/m
2
mW/m
2
W/m
2
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
s max
950
nm
Halbwinkel
Half angle
45
deg.
Stromaufnahme
Pin 2
Current consumption
V
s
= 5 V,
E
v
= 0
V
s
= 5 V,
E
v
= 40 kIx, sunlight
I
CC
I
CC
0.5 (< 0.8)
1.0
mA
mA
Ausgangsspannung
Pin 3
Output voltage
I
OUT
= 0.5 mA,
E
e
= 0.7 mW/m
2
(Testsignal, s. Figure 2)
(test signal, see Fig. 2)
V
OUT low
250
mV
Semiconductor Group
4
SFH 507
Figure 1 Externe Beschaltung
External circuit
Figure 2 Optisches Testsignal (IR-Diode SFH 415,
I
F
= 0.5 A,
N
= 6 pulses,
f
=
f
0
,
T
= 10 ms)
Optical test signal
OHF02197
2
3
1
SFH
>10 k
330
4.7
F
C
optional
*)
*)
+5V
GND
*)
only necessary to suppress power supply disturbances
506/507
t
pi
OHF00220
E
e
*)
t
T
t
O
V
V
OL
OH
V
*)
N
po
t
6 Pulses is recommended for optimal function
2)
1)
t
d
2)
t
pi
-
o
f
3/ <
po
t
<
6/
f
o
+
pi
t
<
t
d
<
4/
f
o
1)
o
f
10/
_
<
SFH 507
Semiconductor Group
5
0
E
OHF00219
0.7
f
0.2
0.4
0.6
0.8
1.0
0.8
0.9
1.0
1.1
1.2
1.3
e min
/
e
E
/
f
0
Vertical directivity
y
Horizontal directivity
x
Relative sensitivity
E
e min
/
E
e
=
f
(
f / f
0
)
f
=
f
0
5 %,
f
(3 dB) =
f
0
/7
OHF00246
0.2
-10
0
-20
-30
-40
-50
-60
-70
-80
-90
20
30
40
50
60
70
80
90
10
0
0.6
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-0.2
-0.4
-0.6
0.2
0.4
OHF00247
0.2
-10
0
-20
-30
-40
-50
-60
-70
-80
-90
20
30
40
50
60
70
80
90
10
0
0.6
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-0.2
-0.4
-0.6
0.2
0.4
Sensitivity vs. electric field disturbance
E
e min
=
f
(
E
), field strength of disturbance,
f
=
f
0
Relative luminous sensitivity
S
rel
=
f
(
),
T
A
= 25
o
C
Output pulse
T
on
,
T
off
= f(E
e
)
0
E
OHF00217
0
mW/m
2
e min
E
0.4
0.8
1.2
kV/m
2.0
0.2
0.4
0.6
0.8
1.0
0
f
f (E) =
(E) = 10 kHz
f
0.0
S
rel
OHF02193
800
850
900
950 1000 1050 nm 1150
0.2
0.4
0.6
0.8
1.0
T
on,
ms
T
e
mW/m
10
0.0
OHF00245
E
-1
10
10
10
0
1
2
4
10
on
off
T
2
off
T
= 950 nm
0.2
0.4
0.6
0.8
1.0
Sensitivity vs. bright ambient
E
e min
=
f
(
E
)
Sensitivity vs. supply volt. disturbances,
E
e min
=
f
(
V
S RMS
)
Sensitivity vs. dark ambient
T
p out
=
f
(
E
e
)
10
E
OHF00215
E
-1
0
10
1
10
2
10
mW/m
-2
10
10
-1
0
10
1
10
2
10
2
W/m
2
e min
Ambient, = 950 nm
Correlation with ambient light sources
(disturbance effect) : 10 W/m
2
1.4 klx
~
_
8.2 klx
(stand. illum. A, T= 2855 K)
(daylight, T = 5900 K)
_
_
~
_
10
E
OHF00214
V
-1
mW/m
-1
10
2
mV
e min
s RMS
2
10
1
10
0
10
10
3
10
-2
0
10
10
1
f
0
f =
10 kHz
1 kHz
100 Hz
0
T
OHF00216
p out
E
-1
10
mW/m
2
50
100
150
200
300
s
Input burst duration
e
250
10
0
10
1
10
2
10
4
= 950 nm
Semiconductor Group
6
SFH 507
Sensitivity vs. duty cycle
E
e
=
f
(
t
p
/
T)
E
mW/m
2
e min
t
p
/T
N = 6
= 16
N
0.0
0.0
OHL00218
0.5
0.1
1.5
2.0
2.5
3.0
0.2
0.4
0.6
0.8
N = 32