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Semiconductor Group
1
1998-08-28
VEO06987
Besondere Merkmale
q
Gehusebauform: 0805
q
Industriestandard bzgl. Ltpadraster
q
geringe Bauteilhhe
q
fr IR-Ltung geeignet
q
fr Hinterleuchtungen und als opt. Indikator einsetzbar
q
gegurtet (8-mm-Filmgurt)
Features
q
0805 package
q
Industry standard footprint
q
low profile
q
suitable for IR reflow soldering process
q
for use as optical indicator and backlighting
q
available taped on reel (8 mm tape)
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 20 mA
V
(mlm)
Bestellnummer
Ordering Code
LG R971-KO
green
colorless clear
6.30 (12 typ.)
100 (typ.)
Q62702-P5099
CHIPLED
LG R971
Semiconductor Group
2
1998-08-28
LG R971
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
30 ... + 85
C
Lagertemperatur
Storage temperature range
T
stg
40 ... + 85
C
Sperrschichttemperatur
Junction temperature
T
j
+ 95
C
Durchlastrom
Forward current
I
F
25
mA
Stostrom
Surge current
t
p
10
s,
D
= 0.005
I
FM
0.1
A
Sperrspanung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
P
tot
70
mW
Wrmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
R
th JA
610
K/W
Semiconductor Group
3
1998-08-28
LG R971
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
570
nm
Spektrale Bandbreite
(typ.)
Spectral bandwidth
(typ.)
I
F
= 20 mA
26
nm
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
2
160
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 20 mA
V
F
V
F
2.3
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
A
A
Temperaturkoeffizient von
dom
(
I
F
= 20 mA)
Temperature coefficient of
dom
(
I
F
= 20 mA)
TC
0.06
nm/K
Temperaturkoeffizient von
peak
,
I
F
= 20 mA
(typ.)
Temperature coefficient of
peak
,
I
F
= 20 mA
(typ.)
TC
0.10
nm/K
Temperaturkoeffizient von
(
I
F
= 20 mA)
Temperature coefficient of
(
I
F
= 20 mA)
TC
0.03
nm/K
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
TC
V
1.3
mV/K
Temperaturkoeffizient von
I
V
, I
F
= 20 mA (typ.)
Temperature coefficient of
I
V
, I
F
= 20 mA (typ.)
TC
Iv
0.3
%/K
Semiconductor Group
4
1998-08-28
LG R971
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V(
) =
spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
OHL00406
400
0
0.2
0.4
0.6
0.8
1.0
nm
%
rel
0.7
0.5
0.3
0.1
450
500
550
600
650
700
750
V
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0
10
20
40
30
OHL00408
50
60
70
80
90
100
0
20
40
60
80
100
120
Semiconductor Group
5
1998-08-28
LG R971
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
10
-3
V
OHL00407
F
F
V
mA
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
3.2
-2
10
-1
10
0
10
1
10
2
10
30
OHL00405
F
0
100
60
40
20
A
80
0
T
5
10
15
20
25
C
mA
V
V (20 mA)
10
-1
0
10
10
1
2
10
mA
OHL00409
F
10
1
10
0
10
-1
10
-2
10
-3
-4
10
Semiconductor Group
6
1998-08-28
LG R971
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
GEO06987
1.25
0.1
0.1
2
Kathode/
1.2
0.1
0.1
1.3
0.1
0.29
0.5
0.1
0.1
0.3
0.8
0.1
Cathode
mark