Semiconductor Group
1
1997-11-19
Silizium-Fotodiode
Silicon Photodiode
Wesentliche Merkmale
q
Speziell geeignet fr Anwendungen im
Bereich von 350 nm bis 1100 nm
q
Sperrstromarm (typ. 20 pA)
q
DIL-Plastikbauform mit hoher
Packungsdichte
Anwendungen
q
Belichtungsmesser
q
Farbanalyse
Features
q
Especially suitable for applications from
350 nm to 1100 nm
q
Low reverse current (typ. 20 pA)
q
DIL plastic package with high packing
density
Applications
q
Exposure meters
q
Color analysis
BPW 33
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
GEO06643
4.0
3.7
4.3
4.5
5.4
4.9
0.6
0.4
0.6
0.4
1.2
0.7
0.3
0.5
0.8
0.6
Cathode marking
0.6
0.8
1.9
2.2
3.0
3.5
0.6
0.4
Chip position
0.4
0.6
0.35
0.2
0 ... 5
5.08 mm
spacing
Approx. weight 0.1 g
1.4
Photosensitive area
2.65 mm x 2.65 mm
1.8
feo06643
Typ
Type
Bestellnummer
Ordering Code
BPW 33
Q62702-P76
BPW 33
Semiconductor Group
2
1997-11-19
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 85
C
Sperrspannung
Reverse voltage
V
R
7
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K)
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
S
75 (
35)
nA/Ix
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
800
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
350 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.34
mm
2
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
B
L
W
2.71
2.71
mm
mm
Abstand Chipoberflche zu Gehuseober-
flche
Distance chip front to case surface
H
0.5
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 1 V
Dark current
I
R
20 (
100)
pA
Nullpunktsteilheit,
E
= 0
Zero crossover
S
0
2.5
pA/mV
BPW 33
Semiconductor Group
3
1997-11-19
Spektrale Fotoempfindlichkeit,
= 850 nm
Spectral sensitivity
S
0.59
A/W
Quantenausbeute,
= 850 nm
Quantum yield
0.86
Electrons
Photon
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
V
O
440 (
375)
mV
Kurzschlustrom,
E
v
= 1000 Ix
Short-circuit current
I
SC
72
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 k
;
V
R
= 5 V;
= 850 nm;
I
p
= 70
A
t
r
,
t
f
1.5
s
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
630
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.2
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 1 V,
= 850 nm
NEP
4.3
10
15
W
Hz
Nachweisgrenze,
V
R
= 1 V,
= 850 nm
Detection limit
D*
6.3
10
13
cm
Hz
W
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K) (cont'd)
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
BPW 33
Semiconductor Group
4
1997-11-19
Directional characteristics
S
rel
=
f
(
)
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Relative spectral sensitivity
S
rel
=
f
(
)
Dark current
I
R
=
f
(
V
R
),
E
= 0
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-circuit voltage
V
O
=
f
(
E
v
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
Total power dissipation
P
tot
=
f
(
T
A
)
Dark current
I
R
=
f
(
T
A
),
V
R
= 1 V,
E
= 0
OHF00062
0
rel
S
400
600
800
1000
1200
20
40
60
80
%
100
nm
OHF00073
0
0
V
R
R
V
2
4
6
8
10
20
40
60
pA
80
1
3
5
7
E
OHF01064
e
0
10
P
10
1
10
2
10
4
10
-1
10
0
10
1
10
2
4
10
3
10
2
10
1
10
10
0
V
O
A
mV
P
V
O
3
10
lx
3
10
V
OHF01065
R
-2
10
C
10
-1
10
0
10
1
10
2
V
0
100
200
300
400
500
600
700
800
pF
1000
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00075
A
R
10
0
10
1
10
2
10
3
10
4
pA
0
C
20
40
60
80
100
PDF 
ZIP