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Электронный компонент: Q62703-Q1750

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Semiconductor Group
1
1998-07-13
LC 3 mm (T1) LED, Diffused
Low Current LED
LS 3369, LY 3369, LG 3369
Streuung der Lichterstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 2 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LS 3369-EH
LS 3369-G
LS 3369-H
LS 3369-GK
super-red
red diffused
0.63 ... 5.0
1.60 ... 3.2
2.50 ... 5.0
1.60 ... 12.5
Q62703-Q1748
Q62703-Q2068
Q62703-Q3820
Q62703-Q3821
LY 3369-EH
LY 3369-F
LY 3369-G
LY 3369-H
LY 3369-FJ
yellow
yellow diffused
0.63 ... 5.0
1.00 ... 2.0
1.60 ... 3.2
2.50 ... 5.0
1.00 ... 8.0
Q62703-Q1749
Q62703-Q2030
Q62703-Q2029
Q62703-Q1906
Q62703-Q3822
LG 3369-EH
LG 3369-F
LG 3369-G
LG 3369-FJ
green
green diffused
0.63 ... 5.0
1.00 ... 2.0
1.60 ... 3.2
1.00 ... 8.0
Q62703-Q1750
Q62703-Q2069
Q62703-Q2070
Q62703-Q3823
VEX
0
6
7
1
0
Besondere Merkmale
q
eingefrbtes, diffuses Gehuse
q
als optischer Indikator einsetzbar
q
hohe Lichtstrke bei kleinen Strmen (typ. 2 mA)
q
Ltspiee mit Aufsetzebene
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colored, diffused package
q
for use as optical indicator
q
high luminous intensity at low currents (typ. 2 mA)
q
solder leads with stand-off
q
available taped on reel
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
1998-07-13
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
7.5
mA
Stostrom
Surge current
t
10
s, D = 0.005
I
FM
0.15
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
20
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
R
th JA
500
K/W
LS 3369, LY 3369, LG 3369
Semiconductor Group
3
1998-07-13
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LY LG
Wellenlnge des emittierten Lichtes(typ.)
Wavelength at peak emission(typ.)
I
F
= 7.5 mA
peak
635
586
565
nm
Dominantwellenlnge(typ.)
Dominant wavelength(typ.)
I
F
= 7.5 mA
dom
628
590
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 7.5 mA
45
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
60
60
60
Grad
deg.
Durchlaspannung(typ.)
Forward voltage(max.)
I
F
= 2 mA
V
F
V
F
1.8
2.6
2.0
2.7
1.9
2.6
V
V
Sperrstrom(typ.)
Reverse current(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
A
A
Kapazitt(typ.)
Capacitance
V
R
= 0 V, = 1 MHz
C
0
3
3
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %(typ.)
I
V
from 90 % to 10 %(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
200
150
200
150
450
200
ns
ns
LS 3369, LY 3369, LG 3369
Semiconductor Group
4
1998-07-13
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 7.5 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LS 3369, LY 3369, LG 3369
Semiconductor Group
5
1998-07-13
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(2 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
10
-1
V
5
OHL01208
F
F
V
0
10
1
10
2
10
5
mA
1.0
1.4
1.8
2.2
2.6
3.0
3.4
yellow
green
super-red
OHL01278
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
T
T
P
F
t
P
=
D
= 0.005
0.01
0.02
0.05
0.2
0.5
DC
10
0
5
F
t
1
10
2
10
3
10
5
mA
0.1
p
V
V (2mA)
10
-1
0
10
10
1
2
10
mA
10
-3
5
OHL01207
F
5
-2
10
5
-1
10
0
10
1
10
5
5
green
super-red
yellow
0
OHL01193
F
C
A
T
0
20
40
60
80
100
1
2
3
4
5
6
mA
8
LS 3369, LY 3369, LG 3369
Semiconductor Group
6
1998-07-13
Wellenlnge der Strahlung
peak
=
f
(
T
A
)
Wavelength at peak emission
I
F
= 7.5 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 2 mA
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 7.5 mA
Relative Lichtstrke
I
V
/
I
V(25
C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 2 mA
green
yellow
super-red
550
OHL01672
peak
C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
yellow
green
super-red
1.4
OHL01750
V
F
C
A
T
0
20
40
60
80
100
1.6
1.8
2.0
2.2
V
2.4
yellow
green
super-red
550
OHL01673
dom
C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
yellow
green
super-red
0.0
OHL01675
C
A
T
0
20
40
60
80
100
V
V (25 C)
0.4
0.8
1.2
1.6
2.0
LS 3369, LY 3369, LG 3369
Semiconductor Group
7
1998-07-13
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung:
Krzerer Ltspie
Cathode mark:
Short solder lead
0.4
0.6
3.1
3.4
Area not flat
5.7
6.1
2.7
2.9
4.8
4.4
3.7
3.5
27.0
29.0
spacing
2.54 mm
0.8
0.4
0.4
0.7
0.4
0.6
1.2
1.8
GEX06710
0.9
1.1
Collector/
2.1
2.7
Chip position
Cathode
LS 3369, LY 3369, LG 3369