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Электронный компонент: Q62703-Q2000

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Semiconductor Group
1
11.96
Besondere Merkmale
q
eingefrbtes, diffuses Gehuse
q
als optischer Indikator einsetzbar
q
Ltspiee ohne Aufsetzebene
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colored, diffused package
q
for use as optical indicator
q
solder leads without stand-off
q
available taped on reel
q
load dump resistance acc. to DIN 40839
5 mm (T1
3
/
4
) LED, Diffused
LR 5360, LS 5360, LY 5360
LG 5360
VEX06716
Semiconductor Group
2
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LR 5360-DG
LR 5360-F
LR 5360-G
LR 5360-FJ
red
red diffused
0.4 ... 3.2
1.0 ... 2.0
1.6 ... 3.2
1.0 ... 8.0
Q62703-Q1376
Q62703-Q1377
Q62703-Q1378
Q62703-Q1379
LS 5360-HL
LS 5360-J
LS 5360-K
LS 5360-L
LS 5360-JM
super-red
red diffused
2.5 ... 20.0
4.0 ... 8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
Q62703-Q1380
Q62703-Q1744
Q62703-Q1381
Q62703-Q1382
Q62703-Q3224
LY 5360-HL
LY 5360-J
LY 5360-K
LY 5360-L
LY 5360-JM
yellow
yellow diffused
2.5 ... 20.0
4.0 ... 8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
Q62703-Q2000
Q62703-Q1386
Q62703-Q2001
Q62703-Q2404
Q62703-Q1387
LG 5360-GK
LG 5360-H
LG 5360-J
LG 5360-K
LG 5360-HL
green
green diffused
1.6 ... 12.5
2.5 ... 5.0
4.0 ... 8.0
6.3 ... 12.5
2.5 ... 20.0
Q62703-Q1391
Q62703-Q1390
Q62703-Q1866
Q62703-Q2012
Q62703-Q3188
LR 5360, LS 5360, LY 5360
LG 5360
Semiconductor Group
3
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LR
LS, LY, LG
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
45
40
mA
Stostrom
Surge current
t
10
s, D = 0.005
I
FM
0.5
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
100
140
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
R
th JA
400
K/W
LR 5360, LS 5360, LY 5360
LG 5360
Semiconductor Group
4
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LR
LS
LY
LG
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
660
635
586
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
645
628
590
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 20 mA
35
45
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
50
50
50
50
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
1.6
2.0
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
25
12
10
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
120
50
300
150
300
150
450
200
ns
ns
LR 5360, LS 5360, LY 5360
LG 5360
Semiconductor Group
5
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LR 5360, LS 5360, LY 5360
LG 5360
Semiconductor Group
6
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LS, LY, LG
LR 5360, LS 5360, LY 5360
LG 5360
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LR
Semiconductor Group
7
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 20 mA
Wellenlnge der Strahlung
peak
=
f
(
T
A
)
Wavelength at peak emission
I
F
= 20 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 10 mA
LR 5360, LS 5360, LY 5360
LG 5360
Semiconductor Group
8
LR 5360, LS 5360, LY 5360
LG 5360
Relative Lichtstrke
I
V
/
I
V(25
C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 10 mA
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung:
Krzerer Ltspie
Cathode mark:
Short solder lead
GEX06716