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Semiconductor Group
1
11.96
SOT-23 MULTILED
, Diffused
LU S250, LV S260, LW S260
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LU S250-DO
super-red/green
colorless diffused
0.4
Q62703-Q1642
LV S260-DO
super-red/
super-red
red diffused
0.4
Q62703-Q2067
LW S260-DO
green/green
green diffused
0.4
Q62703-Q1038
VS006723
Besondere Merkmale
q
eingefrbtes, diffuses Gehuse
q
extrem weitwinklig
q
als optischer Indikator einsetzbar
q
fr alle SMT-Bestck- und Lttechniken geeignet
q
beide Farben getrennt ansteuerbar
q
gegurtet (8-mm-Filmgurt)
q
Strimpulsfest nach DIN 40838
Features
q
colored, diffused package
q
extreme wide-angle LED
q
for use as optical indicator
q
suitable for all SMT assembly and soldering methods
q
both colors can be controlled separately
q
available taped on reel (8 mm tape)
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
0.5
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
100
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
1)
R
th JA
750
K/W
1)
Auf Platine geltet: Ltflche
16 cm
2
.
1)
Soldered on PC board: pad size
16 cm
2
.
Notes
Die angegebenen Grenzdaten gelten fr einen Chip.
The stated maximum ratings refer to one chip.
LU S250, LV S260, LW S260
Semiconductor Group
3
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
super-red
green
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
635
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
628
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 20 mA
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
140
140
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
12
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
300
150
450
200
ns
ns
LU S250, LV S260, LW S260
Semiconductor Group
4
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LU S250, LV S260, LW S260
Semiconductor Group
5
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
LU S250, LV S260, LW S260
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Semiconductor Group
6
Wellenlnge der Strahlung
Wavelength at peak emission
peak
=
f
(
T
A
),
I
F
= 20 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 10 mA
LU S250, LV S260, LW S260
Dominantwellenlnge
Dominant wavelength
dom
=
f
(
T
A
),
I
F
= 20 mA
Relative Lichtstrke
I
V
/
I
V(25
C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 10 mA
Semiconductor Group
7
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Anschlubelegung:
(Draufsicht)
Pin configuration:
(top view)
GSO06866
LU S250, LV S260, LW S260