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Электронный компонент: Q62703-Q2384

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Semiconductor Group
1
11.96
LC TOPLED
Low Current LED
LS T679, LY T679, LG T679
Besondere Merkmale
q
Gehusebauform: P-LCC-2
q
Gehusefarbe: wei
q
als optischer Indikator einsetzbar
q
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
q
fr alle SMT-Bestck- und Lttechniken geeignet
q
gegurtet (8-mm-Filmgurt)
Features
q
P-LCC-2 package
q
color of package: white
q
for use as optical indicator
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and soldering methods
q
available taped on reel (8 mm tape)
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 2 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 2 mA
V
(mlm)
Bestellnummer
Ordering Code
LS T679-CO
super-red
colorless clear
0.25
(1.0 typ.)
3.0 (typ.)
Q62703-Q2383
LY T679-CO
yellow
colorless clear
0.25
(1.0 typ.)
3.0 (typ.)
Q62703-Q2384
LG T679-CO
green
colorless clear
0.25
(1.0 typ.)
3.0 (typ.)
Q62703-Q2385
VPL06724
Semiconductor Group
2
LS T679, LY T679, LG T679
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
7.5
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
0.15
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
P
tot
20
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-Board (Padgre
16 mm
2
)
mounted on PC board (pad size
16 mm
2
)
R
th JA
500
K/W
Semiconductor Group
3
LS T679, LY T679, LG T679
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LY
LG
Wellenlnge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
F
= 7.5 mA
peak
635
586
565
nm
Dominantwellenlnge (typ.)
Dominant wavelength (typ.)
I
F
= 7.5 mA
dom
628
590
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 7.5 mA
45
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
120
120
120
Grad
deg.
Durchlaspannung (typ.)
Forward voltage (max.)
I
F
= 2 mA
V
F
V
F
1.8
2.6
2.0
2.7
1.9
2.6
V
V
Sperrstrom (typ.)
Reverse current (max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
A
A
Kapazitt (typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
3
3
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 % (typ.)
I
V
from 90 % to 10 % (typ.)
I
F
= 100 mA,
t
p
= 10
s,
R
L
= 50
t
r
t
f
200
150
200
150
450
200
ns
ns
Semiconductor Group
4
LS T679, LY T679, LG T679
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 7.5 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
Semiconductor Group
5
LS T679, LY T679, LG T679
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(2 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
I
F
=
f
(
T
A
)
Max. permissible forward current
Semiconductor Group
6
LS T679, LY T679, LG T679
Wellenlnge der Stahlung
peak
=
f (T
A
)
Wavelength at peak emission
I
F
= 7.5 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 2 mA
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 7.5 mA
Relative Lichtstrke
I
V
/
I
V(25 C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 2 mA
Semiconductor Group
7
LS T679, LY T679, LG T679
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennung: abgeschrgte Ecke
Cathode mark:
bevelled edge
GPL06724